Inventor

Yutaka Koshino

Inventor

Yokosuka, JP

Overview

26→

Patents

1982–1997

Patent span

Electricity

Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%

H10DInorganic electric semiconductor devices22%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%

G01RMeasuring electric variables2%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%

Y10TTechnical subjects covered by former us classification2%

PatentTitleYear

5,637,894'Solid state image sensor device with single-layered transfer electrodes'1997 5,229,323'Method for manufacturing a semiconductor device with Schottky electrodes'1993 5,126,817'Dielectrically isolated structure for use in soi-type semiconductor device'1992 5,086,332'Planar semiconductor device having high breakdown voltage'1992 5,084,408'Method of making complete dielectric isolation structure in semiconductor integrated circuit'1992 5,049,954'GaAs field effect semiconductor device having Schottky gate structure'1991 5,031,021'Semiconductor device with a high breakdown voltage'1991 5,029,324'Semiconductor device having a semiconductive protection layer'1991 4,984,052'Bonded substrate of semiconductor elements having a high withstand voltage'1991 4,968,932'Evaluation method for semiconductor device'1990 4,780,426'Method for manufacturing high-breakdown voltage semiconductor device'1988 4,729,966'Process for manufacturing a Schottky FET device using metal sidewalls as gates'1988 4,710,794'Composite semiconductor device'1987 4,700,455'Method of fabricating Schottky gate-type GaAs field effect transistor'1987 4,585,489'Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer'1986 4,566,174'Semiconductor device and method for manufacturing the same'1986 4,560,642'Method of manufacturing a semiconductor device'1985 4,542,400'Semiconductor device with multi-layered structure'1985 4,532,004'Method of manufacturing a semiconductor device'1985 4,515,642'Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby'1985 4,502,207'Wiring material for semiconductor device and method for forming wiring pattern therewith'1985 4,479,830'Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker'1984 4,426,234'Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing'1984 4,415,372'Method of making transistors by ion implantations, electron beam irradiation and thermal annealing'1983 4,404,736'Method for manufacturing a semiconductor device of mesa type'1983 4,351,894'Method of manufacturing a semiconductor device using silicon carbide mask'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–1986Patents assigned to TOKYO SHIBAURA ELECTRIC CO (10)· patent assignee history

1982Based in Ohizumi, JP· patent location history

1983–1991Based in Yokosuka, JP· patent location history

1985–1997Patents assigned to TOSHIBA KK (16)· patent assignee history

1985Based in Tokyo, JP· patent location history

1988–1997Based in Yokohama, JP· patent location history

1991Based in Hyogo, JP· patent location history

1992Patents assigned to TOKUDA SEISAKUSHO (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	16	1985–1997
TOKYO SHIBAURA ELECTRIC CO	10	1982–1986
TOKUDA SEISAKUSHO	1	1992

Locations

Location	Patents	Span
Yokosuka, JP	14	1983–1991
Yokohama, JP	9	1988–1997
Hyogo, JP	1	1991
Tokyo, JP	1	1985
Ohizumi, JP	1	1982