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Inventor

Manfred Ruehrig

Inventor
Eckental, DE

Overview

12→
Patents
2007–2020
Patent span
Physics
Primary field (CPC G)

Patents· 12 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores24%
H01FMagnets12%
H10NElectric solid-state devices not otherwise provided for12%
A61BDiagnosis8%
B82YSpecific uses or applications of nanostructures8%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure8%
G21KHandling of particles or ionising radiation not otherwise provided for8%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form4%
F02PIgnition, other than compression ignition, for internal-combustion engines4%
H05HPlasma technique4%
PatentTitleYear
10,553,325Scattered radiation grid with an amorphous material and its use in a scattered radiation grid202010,111,314Energy generation by igniting flames of an electropositive metal by plasmatizing the reaction gas20189,241,679'Method and apparatus for filtering high-frequency electromagnetic beams and irradiation apparatus or device for irradiating an object'20167,893,511'Integrated circuit, memory module, and method of manufacturing an integrated circuit'20117,755,936'Integrated circuits, cell, cell arrangement, method of reading a cell, memory module'20107,566,941'Magnetoresistive memory cell and process for producing the same'20097,535,217'Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force'20097,490,522'Magnetostrictive multilayer sensor and method for producing a sensor'20097,436,700'MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same'20087,309,617'MRAM memory cell with a reference layer and method for fabricating'20077,280,393'MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same'20077,205,596'Adiabatic rotational switching memory element including a ferromagnetic decoupling layer'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2009Patents assigned to INFINEON TECHNOLOGIES AG (7)· patent assignee history
2007–2010Patents assigned to ALTIS SEMICONDUCTOR SNC (2)· patent assignee history
2007–2011Based in Eckental, DE· patent location history
2010–2011Patents assigned to QIMONDA AG (2)· patent assignee history
2016–2018Patents assigned to SIEMENS AG (2)· patent assignee history
2016–2020Based in Lauf a.d. Pegnitz, DE· patent location history
2020Patents assigned to SIEMENS HEALTHCARE GMBH (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INFINEON TECHNOLOGIES AG72007–2009
ALTIS SEMICONDUCTOR SNC22007–2010
QIMONDA AG22010–2011
SIEMENS AG22016–2018
SIEMENS HEALTHCARE GMBH12020
Locations
LocationPatentsSpan
Eckental, DE92007–2011
Lauf a.d. Pegnitz, DE32016–2020