Inventor
INGO DIRNSTORFER
Inventor
DE
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H01LSemiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
PatentTitleYear
12,501,669Mesa contact for MOS controlled power semiconductor device202511,949,006Power semiconductor device with p-contact and doped insulation blocks defining contact holes202411,888,061Power semiconductor device having elevated source regions and recessed body regions202411,610,986Power semiconductor switch having a cross-trench structure202311,257,946Method of forming a power semiconductor device2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2024Patents assigned to INFINEON TECH DRESDEN GMBH & CO KG (4)· patent assignee history
2022–2025Based in DE· patent location history
2023–2025Patents assigned to INFINEON TECHNOLOGIES AG (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECH DRESDEN GMBH & CO KG | 4 | 2022–2024 |
| INFINEON TECHNOLOGIES AG | 2 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| DE | 5 | 2022–2025 |