LexDanaLexDanabeta
Inventor

Shy-Jay Lin

Inventor
Hsinchu County, TW

Overview

69→
Patents
1999–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 69 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices28%
H01JElectric discharge tubes or discharge lamps16%
G06FElectric digital data processing9%
H01LSemiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
B82YSpecific uses or applications of nanostructures7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
G11CStatic stores3%
H10BElectronic memory devices3%
H10NElectric solid-state devices not otherwise provided for3%
PatentTitleYear
10,879,307Magnetic device and magnetic random access memory202010,811,225Method of fabricating an integrated circuit with a pattern density-outlier-treatment for optimized pattern density uniformity202010,804,066Data processing of electron beam lithography system202010,756,255Semiconductor device with asymmetrical pinned magnets, and method of manufacture202010,680,166Semiconductor structure and associated operating and fabricating method202010,541,361Magnetic random access memory and manufacturing method thereof202010,446,358Data processing of electron beam lithography system201910,431,423Method of fabricating an integrated circuit with a pattern density-outlier-treatment for optimized pattern density uniformity201910,359,695Method of fabricating an integrated circuit with non-printable dummy features201910,276,784Semiconductor structure and associated operating and fabricating method201910,170,276Method of fabricating an integrated circuit with a pattern density-outlier-treatment for optimized pattern density uniformity201910,049,851Data processing of electron beam lithography system201810,038,137MRAM device and method for fabricating the same20189,911,575'Apparatus for charged particle lithography system'20189,810,994'Systems and methods for high-throughput and small-footprint scanning exposure for lithography'20179,761,411'System and method for maskless direct write lithography'20179,734,883'Reference circuit and MRAM'20179,678,434'Grid refinement method'20179,658,538'System and technique for rasterizing circuit layout data'20179,594,862'Method of fabricating an integrated circuit with non-printable dummy features'20179,589,764'Electron beam lithography process with multiple columns'20179,552,964'Method of fabricating an integrated circuit with a pattern density-outlier-treatment for optimized pattern density uniformity'20179,529,271'Grid refinement method'20169,519,225'Systems and methods for high-throughput and small-footprint scanning exposure for lithography'20169,436,787'Method of fabricating an integrated circuit with optimized pattern density uniformity'20169,436,788'Method of fabricating an integrated circuit with block dummy for optimized pattern density uniformity'20169,418,191'Providing electron beam proximity effect correction by simulating write operations of polygonal shapes'20169,390,891'Apparatus for charged particle lithography system'20169,329,488'Grid refinement method'20169,291,913'Pattern generator for a lithography system'20169,229,332'Systems and methods for high-throughput and small-footprint scanning exposure for lithography'20169,182,660'Methods for electron beam patterning'20159,176,389'Grid refinement method'20159,134,627'Multiple-patterning overlay decoupling method'20159,001,308'Pattern generator for a lithography system'20158,984,452'Long-range lithographic dose correction'20158,972,908'Method for electron beam proximity correction with improved critical dimension accuracy'20158,927,947'Systems and methods providing electron beam writing to a medium'20158,852,849'Electron beam lithography system and method for improving throughput'20148,846,278'Electron beam lithography system and method for improving throughput'20148,828,632'Multiple-grid exposure method'20148,822,107'Grid refinement method'20148,822,106'Grid refinement method'20148,762,900'Method for proximity correction'20148,722,286'Devices and methods for improved reflective electron beam lithography'20148,610,083'Systems and methods providing electron beam writing to a medium'20138,584,057'Non-directional dithering methods'20138,530,121'Multiple-grid exposure method'20138,524,427'Electron beam lithography system and method for improving throughput'20138,510,687'Error diffusion and grid shift in lithography'20138,464,186'Providing electron beam proximity effect correction by simulating write operations of polygonal shapes'20138,378,319'System and method for generating direct-write pattern'20138,368,037'Systems and methods providing electron beam writing to a medium'20138,199,314'System and method for improving immersion scanner overlay performance'20128,178,280'Self-contained proximity effect correction inspiration for advanced lithography (special)'20128,143,602'High-volume manufacturing massive e-beam maskless lithography system'20128,068,208'System and method for improving immersion scanner overlay performance'20117,851,774'System and method for direct writing to a wafer'20107,795,601'Method and apparatus to improve lithography throughput'20107,796,249'Mask haze early detection'20107,571,021'Method and system for improving critical dimension uniformity'20097,381,344'Method to reduce particle level for dry-etch'20086,799,312'Dark line CD and XY-CD improvement method of the variable shaped beam lithography in mask or wafer making'20046,599,665'Method of making a semiconductor wafer imaging mask having uniform pattern features'20036,428,938'Phase-shift mask for printing high-resolution images and a method of fabrication'20026,379,849'Method for forming binary intensity masks'20026,134,014'Apparatus and method of inspecting phase shift masks using comparison of a mask die image to the mask image database'20006,018,392'Apparatus and method for inspecting phase shifting masks'20006,007,324'Double layer method for fabricating a rim type attenuating phase shifting mask'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (41)· patent assignee history
1999–2008Based in Taipei, TW· patent location history
2004–2017Based in Hsinchu, TW· patent location history
2010–2020Based in Hsinchu County, TW· patent location history
2011–2015Patents assigned to LIN SHY-JAY (16)· patent assignee history
2012–2015Patents assigned to LIN BURN JENG (11)· patent assignee history
2013–2015Patents assigned to SHIN JAW-JUNG (10)· patent assignee history
2013–2020Based in Jhudong Township, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (27)· patent assignee history
2020Based in Jhudong, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG411999–2016
TAIWAN SEMICONDUCTOR MFG CO LTD272016–2020
LIN SHY-JAYself162011–2015
LIN BURN JENG112012–2015
SHIN JAW-JUNG102013–2015
Locations
LocationPatentsSpan
Hsinchu County, TW382010–2020
Jhudong Township, TW192013–2020
Taipei, TW51999–2008
Hsinchu, TW42004–2017
Jhudong, TW12020