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Inventor

Shi Li Quan

Inventor
Suwon-si, KR

Overview

3→
Patents
2003–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H03KPulse technique17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
PatentTitleYear
9,318,575'Semiconductor device and method for fabricating the same'20169,263,521'Integrated circuit devices including finFETs and methods of forming the same'20166,573,773'Conflict free radiation tolerant storage cell'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003Patents assigned to UNIV NEW MEXICO (1)· patent assignee history
2003Based in Albuquerque, NM, US· patent location history
2016Patents assigned to SAMSUNG ELECTRONICS CO LTD (2)· patent assignee history
2016Based in Suwon-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD22016
UNIV NEW MEXICO12003
Locations
LocationPatentsSpan
Suwon-si, KR22016
Albuquerque, NM, US12003