Inventor

Hyun-Jo Kim

Inventor

Seoul, KR

Overview

2005–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 37 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices17%

G11CStatic stores16%

H01LSemiconductor devices13%

H10NElectric solid-state devices not otherwise provided for11%

B82YSpecific uses or applications of nanostructures9%

H10BElectronic memory devices8%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

H01FMagnets5%

G11BInformation storage based on relative movement between record carrier and transducer3%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%

PatentTitleYear

10,913,415Bumper beam for a vehicle2021 10,854,452Method of manufacturing semiconductor devices2020 10,714,467Integrated circuit (IC) device2020 10,618,605Semi-submersible maritime structure2020 10,276,567Semiconductor device2019 10,269,928Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels2019 10,153,270Electrostatic discharge protection devices2018 10,109,629Semiconductor devices including gate structures with oxygen capturing films2018 10,074,572Integrated circuit devices and methods of manufacturing the same2018 10,032,886Semiconductor device2018 10,002,943Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels2018 9,922,979'Integrated circuit device and method of manufacturing the same'2018 9,679,896'Moisture blocking structure and/or a guard ring, a semiconductor device including the same, and a method of manufacturing the same'2017 9,673,330'Integrated circuit devices and methods of manufacturing the same'2017 9,397,234'Pumping capacitor'2016 9,379,106'Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels'2016 9,299,811'Methods of fabricating semiconductor devices'2016 8,878,309'Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channels'2014 8,345,467'Resistive memory devices including selected reference memory cells operating responsive to read operations'2013 8,035,145'Magnetic memory device'2011 8,023,311'Resistive memory devices including selected reference memory cells operating responsive to read operations'2011 7,732,222'Magnetic memory device and method of fabricating the same'2010 7,672,155'Resistive memory devices including selected reference memory cells'2010 7,645,619'Magnetic random access memory device and method of forming the same'2010 7,612,969'Magnetic memory device and method of fabricating the same'2009 7,582,890'Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof'2009 7,504,266'Magnetic tunnel junction structures and methods of fabrication'2009 7,495,984'Resistive memory devices including selected reference memory cells'2009 7,378,698'Magnetic tunnel junction and memory device including the same'2008 7,372,090'Magnetic random access memory device and method of forming the same'2008 7,352,021'Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier'2008 7,351,594'Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier'2008 7,218,556'Method of writing to MRAM devices'2007 7,141,438'Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same'2006 7,009,868'Memory device having a transistor and one resistant element as a storing means and method for driving the memory device'2006 6,952,364'Magnetic tunnel junction structures and methods of fabrication'2005 6,838,727'Memory device using a transistor and one resistant element for storage'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (35)· patent assignee history

2005–2009Based in Hwasung, KR· patent location history

2005–2006Based in Kyungki-do, KR· patent location history

2006–2013Based in Gyeonggi-do, KR· patent location history

2007–2021Based in Hwaseong-si, KR· patent location history

2013–2017Patents assigned to KIM HYUN-JO (2)· patent assignee history

2014–2020Based in Seoul, KR· patent location history

2018Patents assigned to KIM HYUN JO (2)· patent assignee history

2018Patents assigned to YOUN JONG MIL (2)· patent assignee history

2021Patents assigned to AUTOMOBILE IND ACE (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	35	2005–2020
KIM HYUN JOself	2	2018
KIM HYUN-JOself	2	2013–2017
YOUN JONG MIL	2	2018
AUTOMOBILE IND ACE	1	2021

Locations

Location	Patents	Span
Seoul, KR	16	2014–2020
Gyeonggi-do, KR	8	2006–2013
Hwaseong-si, KR	7	2007–2021
Hwasung, KR	3	2005–2009
Kyungki-do, KR	2	2005–2006