Inventor
Ho-kyu Kang
Inventor
Yongin, KR
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
H10BElectronic memory devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B82YSpecific uses or applications of nanostructures3%
C09GPolishing compositions3%
C09KMaterials for miscellaneous applications, not provided for elsewhere3%
G11CStatic stores3%
H01LSemiconductor devices3%
PatentTitleYear
8,847,297'Image sensor having moisture absorption barrier layer, fabricating method thereof, and device comprising the image sensor'20147,586,159'Semiconductor devices having different gate dielectrics and methods for manufacturing the same'20097,294,546'Capacitor for a semiconductor device and method of fabricating same'20077,112,849'Method of preventing semiconductor layers from bending and semiconductor device formed thereby'20067,052,967'Method for fabricating capacitor array preventing crosstalk between adjacent capacitors in semiconductor device'20066,930,343'Nonvolatile memory device utilizing a vertical nanotube'20056,881,645'Method of preventing semiconductor layers from bending and semiconductor device formed thereby'20056,563,190'Capacitor array preventing crosstalk between adjacent capacitors in semiconductor device'20036,537,914'Integrated circuit device isolation methods using high selectivity chemical-mechanical polishing'20036,482,715'Method of forming shallow trench isolation layer in semiconductor device'20026,333,251'Method of fabricating gate structure of semiconductor device for repairing damage to gate oxide layer'20015,966,614'Silicon nitride-free isolation methods for integrated circuits'19995,847,424'Capacitor of semiconductor memory device and manufacturing method thereof'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2014Patents assigned to SAMSUNG ELECTRONICS CO LTD (13)· patent assignee history
1998Based in Seoul, KR· patent location history
1999–2006Based in Kyungki-do, KR· patent location history
2001–2002Based in Sungnam, KR· patent location history
2005–2007Based in Yongin, KR· patent location history
2009–2014Based in Yongin-si, KR· patent location history
2014Patents assigned to CHOI JAE-HEE (1)· patent assignee history
2014Patents assigned to KANG HO-KYU (1)· patent assignee history
2014Patents assigned to KIM HONG-KI (1)· patent assignee history
2014Patents assigned to LEE JUNE-TAEG (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 13 | 1998–2014 |
| CHOI JAE-HEE | 1 | 2014 |
| KANG HO-KYUself | 1 | 2014 |
| KIM HONG-KI | 1 | 2014 |
| LEE JUNE-TAEG | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin, KR | 4 | 2005–2007 |
| Kyungki-do, KR | 4 | 1999–2006 |
| Yongin-si, KR | 2 | 2009–2014 |
| Sungnam, KR | 2 | 2001–2002 |
| Seoul, KR | 1 | 1998 |