Inventor
Shurong Liang
Inventor
Poughkeepsie, NY, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices22%
H01JElectric discharge tubes or discharge lamps18%
H05HPlasma technique7%
H10DInorganic electric semiconductor devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
C23CCoating metallic material5%
C23FNon-mechanical removal of metallic material from surface3%
H10NElectric solid-state devices not otherwise provided for3%
A44CPersonal adornments, e.g. jewellery2%
PatentTitleYear
10,918,174Connection structure connecting watchband to watchcase and watch using the same202110,840,132Methods for forming elongated contact hole ends202010,730,082Apparatus and method for differential in situ cleaning202010,699,871System and method for spatially resolved optical metrology of an ion beam202010,600,616Apparatus and techniques to treat substrates using directional plasma and point of use chemistry202010,535,522Angular control of ion beam for vertical surface treatment202010,312,432Magnetic memory device and techniques for forming201910,193,066Apparatus and techniques for anisotropic substrate etching201910,141,161Angle control for radicals and reactive neutral ion beams201810,128,082Apparatus and techniques to treat substrates using directional plasma and point of use chemistry201810,113,229Techniques for controlling ion/neutral ratio of a plasma source201810,004,133Apparatus and techniques to treat substrates using directional plasma and reactive gas20189,997,351Apparatus and techniques for filling a cavity using angled ion beam20189,865,433'Gas injection system for ion beam device'20189,706,634'Apparatus and techniques to treat substrates using directional plasma and reactive gas'20179,299,775'Methods for the production of integrated circuits comprising epitaxially grown replacement structures'20169,275,861'Methods of forming group III-V semiconductor materials on group IV substrates and the resulting substrate structures'20169,224,605'Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process'20159,123,627'Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor device'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2016Patents assigned to GLOBALFOUNDRIES INC (4)· patent assignee history
2015–2020Based in Poughkeepsie, NY, US· patent location history
2017–2020Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (12)· patent assignee history
2018–2020Based in Lynnfield, MA, US· patent location history
2020Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history
2021Patents assigned to SHENZHEN FENDA SMART TECH LIMITED (1)· patent assignee history
2021Based in Shenzhen, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VARIAN SEMICONDUCTOR EQUIPMENT ASS INC | 12 | 2017–2020 |
| GLOBALFOUNDRIES INC | 4 | 2015–2016 |
| APPLIED MATERIALS INC | 2 | 2020 |
| SHENZHEN FENDA SMART TECH LIMITED | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Poughkeepsie, New York, US | 12 | 2015–2020 |
| Lynnfield, Massachusetts, US | 6 | 2018–2020 |
| Shenzhen, CN | 1 | 2021 |