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Inventor

Tang-Xuan Zhong

Inventor
Kaohsiung, TW

Overview

7→
Patents
2007–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 7 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices60%
H01LSemiconductor devices20%
G11CStatic stores10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
10,483,397Fin field effect transistor and method of forming the same20198,927,353'Fin field effect transistor and method of forming the same'2015RE045180'Structure for a multiple-gate FET device and a method for its fabrication'2014RE045165'Structure for a multiple-gate FET device and a method for its fabrication'20147,511,988'Static noise-immune SRAM cells'20097,381,649'Structure for a multiple-gate FET device and a method for its fabrication'20087,265,425'Semiconductor device employing an extension spacer and a method of forming the same'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2015Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history
2007–2019Based in Kaohsiung, TW· patent location history
2008Based in Hsinchu, TW· patent location history
2014–2015Patents assigned to ZHONG TANG-XUAN (3)· patent assignee history
2014Patents assigned to CHEN HUNG-WEI (2)· patent assignee history
2014Patents assigned to LIU SHENG-DA (2)· patent assignee history
2014Patents assigned to WANG CHAO-HSIUNG (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG62007–2015
ZHONG TANG-XUANself32014–2015
CHEN HUNG-WEI22014
LIU SHENG-DA22014
WANG CHAO-HSIUNG22014
Locations
LocationPatentsSpan
Kaohsiung, TW62007–2019
Hsinchu, TW12008