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Inventor

R. P. G. Karunasiri

Inventor
Singapore, SG

Overview

3→
Patents
1989–2000
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
PatentTitleYear
6,156,654'Pulsed laser salicidation for fabrication of ultra-thin silicides in sub-quarter micron devices'20006,010,954'Cmos gate architecture for integration of salicide process in sub 0.1 . .muM devices'20004,873,555'Intraband quantum well photodetector and associated method'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989Patents assigned to UNIV PITTSBURGH (1)· patent assignee history
1989Based in Sherman Oaks, CA, US· patent location history
2000Patents assigned to CHARTERED SEMICONDUCTOR MFG (2)· patent assignee history
2000Patents assigned to UNIV SINGAPORE (2)· patent assignee history
2000Based in Singapore, SG· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CHARTERED SEMICONDUCTOR MFG22000
UNIV SINGAPORE22000
UNIV PITTSBURGH11989
Locations
LocationPatentsSpan
Singapore, SG22000
Sherman Oaks, California, US11989