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Inventor

Friedhelm Bauer

Inventor
Semione, CH

Overview

23→
Patents
1990–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices77%
H01LSemiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,629,677Area efficient floating field ring termination202010,566,463Power semiconductor device with floating field ring termination20209,659,927'Junction barrier Schottky rectifier'20178,829,563'Power semiconductor device and method for manufacturing such a power semiconductor device'20148,304,814'Power semiconductor device'20126,576,936'Bipolar transistor with an insulated gate electrode'20035,710,445'Gate turn-off thyristor for high blocking voltage and small component thickness'19985,698,867'Turn-off, MOS-controlled, power semiconductor component'19975,668,385'Power semiconductor component with transparent emitter and stop layer'19975,661,315'Controllable power semiconductor component'19975,619,047'Semiconductor diode in which electrons are injected into a reverse current'19975,616,938'MOS-controlled power semiconductor component for high voltages'19975,491,351'Gate turn-off thyristor'19965,414,290'IGBT with self-aligning cathode pattern and method for producing it'19955,349,213'Turn-off power semiconductor device'19945,243,201'MOS-controlled thyristor MCT'19935,144,400'Power semiconductor device with switch-off facility'19925,105,244'Gate turn-off power semiconductor component'19925,040,042'Bidirectional semiconductor component that can be turned off'19914,985,741'MOS-controlled bipolar power semiconductor component'19914,975,782'Field effect controlled, bipolar power semiconductor component with silicide layer'19904,967,255'Controllable power semiconductor component'19904,954,869'MOS-controlled thyristor (MCT)'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–1998Patents assigned to ASEA BROWN BOVERI (15)· patent assignee history
1990–1992Based in Wurenlingen, CH· patent location history
1992–1994Based in Baden, CH· patent location history
1995–1996Patents assigned to ABB MANAGEMENT AG (2)· patent assignee history
1995–1998Based in Suhr, CH· patent location history
1996–1997Based in Ittigen, CH· patent location history
2003–2020Patents assigned to ABB SCHWEIZ AG (4)· patent assignee history
2003–2020Based in Semione, CH· patent location history
2012Patents assigned to ABB RESEARCH LTD (1)· patent assignee history
2020Patents assigned to ABB SCHWEIZ (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ASEA BROWN BOVERI151990–1998
ABB SCHWEIZ AG42003–2020
ABB MANAGEMENT AG21995–1996
ABB RESEARCH LTD12012
ABB SCHWEIZ12020
Locations
LocationPatentsSpan
Semione, CH62003–2020
Suhr, CH51995–1998
Wurenlingen, CH51990–1992
Baden, CH31992–1994
Ittigen, CH21996–1997