Inventor
CHIH-LIN WANG
Inventor
TW
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices21%
H10NElectric solid-state devices not otherwise provided for21%
H01LSemiconductor devices19%
G11CStatic stores13%
H10DInorganic electric semiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
B82YSpecific uses or applications of nanostructures2%
G01SRadio direction-finding2%
H04NPictorial communication, e.g. television2%
PatentTitleYear
12,557,558Memory device and formation method thereof202612,501,007Projector and correction method thereof for correcting geometric distortion of projection image202512,451,175Memory device and formation method thereof202512,354,946Delamination control of dielectric layers of integrated circuit chips202512,349,599Memory device having resistance switching layer and integrated circuit device having resistance switching layer202512,315,541Magnetoresistive memory device and manufacturing method thereof202512,148,792Structure and formation method of semiconductor device structure with gate stack202412,069,965Method for manufacturing memory device202412,062,713Memory device and forming method thereof202412,052,934Memory structure and formation method thereof202411,963,460Method for manufacturing memory device having resistance switching layer202411,854,789Method for manufacturing gate structure with additional oxide layer202311,778,923Memory device202311,749,328Magnetoresistive memory device and manufacturing method thereof202311,728,376Structure and formation method of semiconductor device structure with gate stack202311,694,924Semiconductor device having contact plug202311,694,955Semiconductor device and manufacturing method thereof202311,410,714Magnetoresistive memory device and manufacturing method thereof202211,362,089Gate structure with additional oxide layer and method for manufacturing the same202211,362,267Memory device having resistance switching element surrounding top electrode and integrated circuit device including the same202211,251,088Semiconductor device202211,177,430Memory device and manufacturing method thereof2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (21)· patent assignee history
2021–2026Patents assigned to UNIV NAT TAIWAN (10)· patent assignee history
2021–2026Based in TW· patent location history
2025Patents assigned to CORETRONIC CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 21 | 2021–2026 |
| UNIV NAT TAIWAN | 10 | 2021–2026 |
| CORETRONIC CORP | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 22 | 2021–2026 |