Inventor

Leping Li

Inventor
Poughkeepsie, NY, US

Overview

53→
Patents
1993–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 53 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
B24BMachines, devices, or processes for grinding or polishing30%
G01NInvestigating or analysing materials by determining their chemical or physical properties13%
G01BMeasuring length, thickness or similar linear dimensions10%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
Y10TTechnical subjects covered by former us classification4%
G11BInformation storage based on relative movement between record carrier and transducer3%
C23FNon-mechanical removal of metallic material from surface2%
B23KSoldering or unsoldering1%
C23CCoating metallic material1%
PatentTitleYear
9,478,237'Work piece contact pad with centering feature'20169,352,442'Lapping carrier'20169,308,622'Lapping head with a sensor device on the rotating lapping head'20169,115,980'Row bar thickness measurement device, system and methods'20158,767,351'Ambient temperature ball bond'20146,989,683'Enhanced endpoint detection for wet etch process control'20066,899,784'Apparatus for detecting CMP endpoint in acidic slurries'20056,878,629'Method for detecting CMP endpoint in acidic slurries'20056,843,880'Enhanced endpoint detection for wet etch process control'20056,835,117'Endpoint detection in chemical-mechanical polishing of patterned wafers having a low pattern density'20046,741,913'Technique for noise reduction in a torque-based chemical-mechanical polishing endpoint detection system'20046,506,341'Chemiluminescence detection apparatus'20036,440,263'Indirect endpoint detection by chemical reaction and chemiluminescence'20026,419,785'Endpoint detection by chemical reaction'20026,291,351'Endpoint detection in chemical-mechanical polishing of cloisonne structures'20016,276,987'Chemical mechanical polishing endpoint process control'20016,261,851'Optimization of CMP process by detecting of oxide/nitride interface using IR system'20016,254,453'Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system'20016,251,784'Real-time control of chemical-mechanical polishing processing by monitoring ionization current'20016,228,769'Endpoint detection by chemical reaction and photoionization'20016,228,280'Endpoint detection by chemical reaction and reagent'20016,213,846'Real-time control of chemical-mechanical polishing processes using a shaft distortion measurement'20016,194,230'Endpoint detection by chemical reaction and light scattering'20016,180,422'Endpoint detection by chemical reaction'20016,176,765'Accumulator for slurry sampling'20016,126,848'Indirect endpoint detection by chemical reaction and chemiluminescence'20006,072,313'In-situ monitoring and control of conductive films by detecting changes in induced eddy currents'20006,066,564'Indirect endpoint detection by chemical reaction'20006,021,679'Probe for slurry gas sampling'20005,788,801'Real time measurement of etch rate during a chemical etching process'19985,770,948'Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool'19985,731,697'In-situ monitoring of the change in thickness of films'19985,663,637'Rotary signal coupling for chemical mechanical polishing endpoint detection with a westech tool'19975,660,672'In-situ monitoring of conductive films on semiconductor wafers'19975,659,492'Chemical mechanical polishing endpoint process control'19975,644,221'Endpoint detection for chemical mechanical polishing using frequency or amplitude mode'19975,582,746'Real time measurement of etch rate during a chemical etching process'19965,573,624'Chemical etch monitor for measuring film etching uniformity during a chemical etching process'19965,573,623'Apparatus for contactless real-time in-situ monitoring of a chemical etching process'19965,559,428'In-situ monitoring of the change in thickness of films'19965,516,399'Contactless real-time in-situ monitoring of a chemical etching'19965,501,766'Minimizing overetch during a chemical etching process'19965,500,073'Real time measurement of etch rate during a chemical etching process'19965,489,361'Measuring film etching uniformity during a chemical etching process'19965,480,511'Method for contactless real-time in-situ monitoring of a chemical etching process'19965,456,788'Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process'19955,451,289'Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint'19955,445,705'Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process'19955,392,124'Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control'19955,386,121'In situ, non-destructive CVD surface monitor'19955,381,234'Method and apparatus for real-time film surface detection for large area wafers'19955,338,390'Contactless real-time in-situ monitoring of a chemical etching process'19945,220,405'Interferometer for in situ measurement of thin film thickness changes'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2006Patents assigned to IBM (47)· patent assignee history
1993–1994Based in New Paltz, NY, US· patent location history
1995–2006Based in Poughkeepsie, NY, US· patent location history
2003Patents assigned to ECO PHYSICS AG (1)· patent assignee history
2005Patents assigned to ECOPHYSICS AG (1)· patent assignee history
2014–2016Patents assigned to SEAGATE TECHNOLOGY LLC (5)· patent assignee history
2014–2016Based in Bloomington, MN, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM471993–2006
SEAGATE TECHNOLOGY LLC52014–2016
ECO PHYSICS AG12003
ECOPHYSICS AG12005
Locations
LocationPatentsSpan
Poughkeepsie, New York, US461995–2006
Bloomington, Minnesota, US52014–2016
New Paltz, New York, US21993–1994