Inventor
Satoshi Takaki
Inventor
Komae, JP
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material36%
H01JElectric discharge tubes or discharge lamps36%
G03GElectrography4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
Y02PClimate change mitigation technologies in the production or processing of goods4%
F02MSupplying combustion engines in general with combustible mixtures or constituents thereof2%
F05CIndexing scheme relating to materials, material properties or material characteristics for machines, engines or pumps other than non-positive-displacement machines or engines2%
H05HPlasma technique2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
7,582,194'Method and apparatus for forming fluoride thin film'20096,558,507'Plasma processing apparatus'20036,435,130'Plasma CVD apparatus and plasma processing method'20026,333,079'Plasma CVD process'20016,291,029'Plasma processing method'20016,279,504'Plasma CVD system'20016,253,703'Microwave chemical vapor deposition apparatus'20016,152,071'High-frequency introducing means, plasma treatment apparatus, and plasma treatment method'20006,145,469'Plasma processing apparatus and processing method'20006,076,481'Plasma processing apparatus and plasma processing method'20006,065,425'Plasma process apparatus and plasma process method'20005,970,939'Intake manifold for engine'19995,846,612'Process for forming high-quality deposited film utilizing plasma CVD'19985,540,781'Plasma CVD process using a very-high-frequency and plasma CVD apparatus'19965,534,070'Plasma CVD process using a very-high-frequency and plasma CVD apparatus'19965,449,880'Process and apparatus for forming a deposited film using microwave-plasma CVD'19955,069,928'Microwave chemical vapor deposition apparatus and feedback control method'19915,010,276'Microwave plasma CVD apparatus with plasma generating chamber constituting a cylindrical cavity resonator'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2009Patents assigned to CANON KK (17)· patent assignee history
1991–2001Based in Yokohama, JP· patent location history
1996–2003Based in Komae, JP· patent location history
1999Patents assigned to FUTABA IND CO LTD (1)· patent assignee history
1999Patents assigned to SUZUKI MOTOR CO (1)· patent assignee history
1999Based in Okazaki, JP· patent location history
2009Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANON KK | 17 | 1991–2009 |
| FUTABA IND CO LTD | 1 | 1999 |
| SUZUKI MOTOR CO | 1 | 1999 |
Locations
| Location | Patents | Span |
|---|---|---|
| Komae, JP | 12 | 1996–2003 |
| Yokohama, JP | 4 | 1991–2001 |
| Tokyo, JP | 1 | 2009 |
| Okazaki, JP | 1 | 1999 |