Inventor
GUENOLE JAN
Inventor
US
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for23%
G11CStatic stores19%
H10BElectronic memory devices15%
H01FMagnets15%
H01LSemiconductor devices11%
G01RMeasuring electric variables5%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner2%
B24BMachines, devices, or processes for grinding or polishing1%
PatentTitleYear
12,575,328High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications202612,550,623Nitride diffusion barrier structure for spintronic applications202612,501,836Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)202512,356,865Multilayer structure for reducing film roughness in magnetic devices202512,249,450Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation202512,213,385Protective passivation layer for magnetic tunnel junctions202512,167,701Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications202412,167,699Magnetic layer for magnetic random access memory (MRAM) by moment enhancement202412,082,509Dual magnetic tunnel junction (DMTJ) stack design202411,956,971Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices202411,930,717Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM202411,930,716Reduction of capping layer resistance area product for magnetic device applications202411,849,646Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)202311,758,820Protective passivation layer for magnetic tunnel junctions202311,696,511Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions202311,683,994Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio202311,672,182Seed layer for multilayer magnetic materials202311,609,296Method for measuring saturation magnetization of magnetic films and multilayer stacks202311,597,993Monolayer-by-monolayer growth of MgO layers using mg sublimation and oxidation202311,573,270Electrical testing apparatus for spintronics devices202311,569,441Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy202311,563,170Fully compensated synthetic ferromagnet for spintronics applications202311,495,738Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)202211,417,835Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)202211,397,226Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices202211,316,098High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications202211,309,489Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications202211,264,566Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio202211,264,560Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications202211,237,240Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (26)· patent assignee history
2022–2026Patents assigned to HEADWAY TECH INC (4)· patent assignee history
2022–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 26 | 2022–2026 |
| HEADWAY TECH INC | 4 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 30 | 2022–2026 |