Inventor
Anto Yasaka
Inventor
Tokyo, JP
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps48%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices9%
G21KHandling of particles or ionising radiation not otherwise provided for9%
G01NInvestigating or analysing materials by determining their chemical or physical properties6%
G01QScanning-probe techniques or apparatus6%
G06TImage data processing or generation, in general6%
B82YSpecific uses or applications of nanostructures3%
C23CCoating metallic material3%
H01LSemiconductor devices3%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
10,529,531Ion source and electron source having single-atom termination structure, tip having single-atom termination structure, gas field ion source, focused ion beam apparatus, electron source, electron microscope, mask repair apparatus, and method of manufacturing tip having single-atom termination structure202010,276,343Method for acquiring image and ion beam apparatus201910,014,157Method for acquiring image and ion beam apparatus20189,793,085'Focused ion beam apparatus'20179,773,634'Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus'20179,640,361'Emitter structure, gas ion source and focused ion beam system'20179,583,299'Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus'20179,378,858'Repair apparatus'20169,336,979'Focused ion beam apparatus with precious metal emitter surface'20169,257,273'Charged particle beam apparatus, thin film forming method, defect correction method and device forming method'20169,129,771'Emitter structure, gas ion source and focused ion beam system'20158,999,178'Method for fabricating emitter'20158,963,100'Nitrogen ions from a gas field ion source held at a pressure of 1.0 x 10^(-6) pa to 1.0 x 10^(-2) pa'20158,764,994'Method for fabricating emitter'20148,460,842'Defect repair apparatus and method for EUV mask using a hydrogen ion beam'20137,172,839'Photomask correction method using composite charged particle beam, and device used in the correction method'20075,153,440'Method of stabilizing operation for a liquid metal ion source'19924,902,530'Method of correcting a pattern film'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–1992Patents assigned to SEIKO INSTR INC (2)· patent assignee history
1990–2020Based in Tokyo, JP· patent location history
2007–2015Based in Chiba, JP· patent location history
2013–2016Patents assigned to YASAKA ANTO (3)· patent assignee history
2013–2015Patents assigned to ARAMAKI FUMIO (2)· patent assignee history
2014–2020Patents assigned to HITACHI HIGH TECH SCIENCE CORP (10)· patent assignee history
2017Patents assigned to HITACHI HIGH-TECH SCIENCE CORP (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI HIGH TECH SCIENCE CORP | 10 | 2014–2020 |
| HITACHI HIGH-TECH SCIENCE CORP | 4 | 2017 |
| YASAKA ANTOself | 3 | 2013–2016 |
| ARAMAKI FUMIO | 2 | 2013–2015 |
| SEIKO INSTR INC | 2 | 1990–1992 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 15 | 1990–2020 |
| Chiba, JP | 3 | 2007–2015 |