Inventor
I-Chen Yang
Inventor
Hsinchu, TW
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
G11CStatic stores20%
H10BElectronic memory devices17%
H01LSemiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
C23CCoating metallic material2%
PatentTitleYear
11,107,903Selective silicon growth for gapfill improvement202110,879,266Semiconductor device and operating method thereof202010,763,273Vertical GAA flash memory including two-transistor memory cells20209,978,457Method for operating memory array20189,858,995'Method for operating a memory device'20189,460,928'Method for manufacturing semiconductor devices'20169,443,955'Semiconductor device and method for fabricating the same'20169,324,789'Memory device and method for fabricating the same'20169,281,195'Semiconductor structure'20169,208,892'Operation method of multi-level memory'20158,952,484'Non-volatile memory having isolation structures in and above a substrate and manufacturing method thereof'20158,937,347'Non-volatile memory'20158,836,005'Memory array'20148,748,963'Non-volatile memory and manufacturing method thereof'20148,476,694'Memory cell, memory device and method for manufacturing memory cell'20138,411,506'Non-volatile memory and operating method of memory cell'20138,338,880'Flash memory'20128,093,665'Semiconductor device and method for fabricating the same'20128,072,803'Memory device and methods for fabricating and operating the same'20118,014,203'Memory device and methods for fabricating and operating the same'20118,004,890'Operation method of non-volatile memory'20117,898,873'Window enlargement by selective erase of non-volatile memory cells'20117,875,938'LDMOS device with multiple gate insulating members'20117,826,262'Operation method of nitride-based flash memory and method of reducing coupling interference'20107,799,638'Method for forming a memory array'20107,473,625'LDMOS device and method of fabrication'20097,192,834'LDMOS device and method of fabrication of LDMOS device'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2020Patents assigned to MACRONIX INT CO LTD (26)· patent assignee history
2007–2020Based in Changhua County, TW· patent location history
2010–2016Based in Hsinchu, TW· patent location history
2011–2015Patents assigned to CHANG YAO-WEN (7)· patent assignee history
2011–2015Patents assigned to YANG I-CHEN (7)· patent assignee history
2011–2015Patents assigned to LU TAO-CHENG (6)· patent assignee history
2011–2015Patents assigned to WU GUAN-WEI (5)· patent assignee history
2018–2020Based in Miao-Li County, TW· patent location history
2021Based in Yilan County, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 26 | 2007–2020 |
| CHANG YAO-WEN | 7 | 2011–2015 |
| YANG I-CHENself | 7 | 2011–2015 |
| LU TAO-CHENG | 6 | 2011–2015 |
| WU GUAN-WEI | 5 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 16 | 2010–2016 |
| Changhua County, TW | 7 | 2007–2020 |
| Miao-Li County, TW | 3 | 2018–2020 |
| Yilan County, TW | 1 | 2021 |