Inventor
LIQIAO QIN
Inventor
US
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices26%
H10DInorganic electric semiconductor devices26%
B82YSpecific uses or applications of nanostructures16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
G01RMeasuring electric variables5%
H03KPulse technique5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
PatentTitleYear
12,568,683Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFET202612,557,633Multiple critical dimension power rail202612,543,358Transition metal dichalcogenide (TMD) transistor structure202612,490,480Stacked FETS with contact placeholder structures202512,451,431Stacked semiconductor devices with topside and backside interconnect wiring202511,789,064Decoupling BTI and HCI mechanism in ring oscillator202311,158,635Low leakage gate stack for a transistor device and methods of making an IC product that includes such a transistor device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021Patents assigned to GLOBALFOUNDRIES US INC (1)· patent assignee history
2021–2026Based in US· patent location history
2023–2026Patents assigned to IBM (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 6 | 2023–2026 |
| GLOBALFOUNDRIES US INC | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 7 | 2021–2026 |