LexDanaLexDanabeta
Inventor

Sheng-De Liu

Inventor
Zhongli City, TW

Overview

18→
Patents
2014–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices37%
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
A61KPreparations for medical, dental or toiletry purposes5%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations5%
H10KOrganic electric solid-state devices5%
C07CAcyclic or carbocyclic compounds2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
PatentTitleYear
10,959,963Method for the treatment of fatty liver disease202110,905,656Methods and compositions for treating arteriosclerotic vascular diseases202110,658,621OLED panel and manufacturing method thereof and OLED display202010,622,471Manufacturing method of semiconductor structure202010,490,777OLED display and manufacturing method thereof201910,325,910Semiconductor device containing HEMT and MISFET and method of forming the same201910,269,948High-electron-mobility transistor (HEMT) structure capable of protecting a III-V compound layer and manufacturing method thereof201910,141,438Semiconductor structure and manufacturing method thereof20189,941,398High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer20189,911,734'Semiconductor device containing HEMT and MISFET and method of forming the same'20189,748,373'MISFET device'20179,601,608'Structure for a gallium nitride (GaN) high electron mobility transistor'20179,530,685'Isolation trench through backside of substrate'20169,418,901'Semiconductor device containing HEMT and MISFET and method of forming the same'20169,263,569'MISFET device and method of forming the same'20169,142,614'Isolation trench through backside of substrate'20158,928,120'Wafer edge protection structure'20158,912,573'Semiconductor device containing HEMT and MISFET and method of forming the same'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (4)· patent assignee history
2014–2019Based in Zhongli City, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (10)· patent assignee history
2018–2020Based in Taoyuan County, TW· patent location history
2019–2020Patents assigned to WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (2)· patent assignee history
2019Based in Hubei, CN· patent location history
2020Based in Guangdong, CN· patent location history
2021Patents assigned to GOLDEN BIOTECHNOLOGY CORP (2)· patent assignee history
2021Patents assigned to CHEN CHIH MING (1)· patent assignee history
2021Based in New Taipei, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD102016–2020
TAIWAN SEMICONDUCTOR MFG42014–2016
GOLDEN BIOTECHNOLOGY CORP22021
WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD22019–2020
CHEN CHIH MING12021
Locations
LocationPatentsSpan
Zhongli City, TW102014–2019
Taoyuan County, TW42018–2020
New Taipei, TW22021
Guangdong, CN12020
Hubei, CN12019