Inventor
Tetsuya Tatsumi
Inventor
Kanagawa, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1035%
H01JElectric discharge tubes or discharge lamps15%
G06FElectric digital data processing9%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B82YSpecific uses or applications of nanostructures4%
H01LSemiconductor devices4%
H10BElectronic memory devices4%
H10NElectric solid-state devices not otherwise provided for4%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light2%
PatentTitleYear
10,998,174Dry etching equipment and method for producing semiconductor device202110,403,516Etching characteristic estimation method, program, information processing apparatus, processing apparatus, designing method, and production method20199,411,914'Simulator, processing system, damage evaluation method and damage evaluation program'20169,287,097'Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process'20168,747,685'Shape simulation apparatus, shape simulation program, semiconductor production apparatus, and semiconductor device production method'20148,685,856'Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure'20148,649,893'Semiconductor manufacturing device, semiconductor device manufacturing method, simulation device, and simulation program'20148,535,550'Shape simulation apparatus, shape simulation program, semiconductor production apparatus, and semiconductor device production method'20137,808,026'Dry etching method and production method of magnetic memory device'20107,473,646'Dry etching method and production method of magnetic memory device'20097,439,068'Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system'20085,660,681'Method for removing sidewall protective film'19975,378,311'Method of producing semiconductor device'19955,368,686'Dry etching method for W polycide using sulfur deposition'19945,362,361'Dry etching method'19945,354,421'Dry etching method'19945,266,154'Dry etching method'19935,227,341'Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step'19935,211,790'Dry etching method by sulfur conditioning'19935,200,028'Etching process of silicon material'19935,180,464'Dry etching method'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2016Patents assigned to SONY CORP (19)· patent assignee history
1993–2021Based in Kanagawa, JP· patent location history
2013–2021Patents assigned to TATSUMI TETSUYA (5)· patent assignee history
2013–2021Patents assigned to KUBOI NOBUYUKI (4)· patent assignee history
2013Patents assigned to KINOSHITA TAKASHI (1)· patent assignee history
2019–2021Patents assigned to SONY SEMICONDUCTOR SOLUTIONS CORP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 19 | 1993–2016 |
| TATSUMI TETSUYAself | 5 | 2013–2021 |
| KUBOI NOBUYUKI | 4 | 2013–2021 |
| SONY SEMICONDUCTOR SOLUTIONS CORP | 2 | 2019–2021 |
| KINOSHITA TAKASHI | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 21 | 1993–2021 |