Inventor
Duncan W. Brown
Inventor
Wilton, CT, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material13%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry11%
C01BNon-metallic elements11%
H10NElectric solid-state devices not otherwise provided for8%
C30BSingle-crystal growth6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B01DSeparation5%
G02BOptical elements, systems or apparatus5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
PatentTitleYear
6,533,874'GaN-based devices using thick (Ga, Al, In)N base layers'20036,156,581'GaN-based devices using (Ga, AL, In)N base layers'20006,126,996'Metal complex source reagents for chemical vapor deposition'20006,027,547'Fluid storage and dispensing vessel with modified high surface area solid as fluid storage medium'20005,919,522'Growth of BaSrTiO.sub.3 using polyamine-based precursors'19995,840,897'Metal complex source reagents for chemical vapor deposition'19985,453,494'Metal complex source reagents for MOCVD'19955,312,983'Organometallic tellurium compounds useful in chemical vapor deposition processes'19945,280,012'Method of forming a superconducting oxide layer by MOCVD'19945,225,561'Source reagent compounds for MOCVD of refractory films containing group IIA elements'19935,051,785'N-type semiconducting diamond, and method of making the same'19915,015,411'Process, composition, and apparatus for purifying inert gases to remove Lewis acid and oxidant impurities therefrom'19914,983,363'Apparatus for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom'19914,950,419'Process, composition, and apparatus for purifying inert gases to remove lewis acid and oxidant impurities therefrom'19904,925,646'Process and composition for drying of gaseous hydrogen halides'19904,923,716'Chemical vapor desposition of silicon carbide'19904,920,068'Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials'19904,865,822'Process for purifying hydrogen selenide and hydrogen telluride, to remove moisture and oxidant impurities therefrom'19894,853,148'Process and composition for drying of gaseous hydrogen halides'19894,797,227'Process and composition for purifying hydrogen selenide and hydrogen telluride, to remove moisture and oxidant impurities therefrom'19894,781,900'Process and composition for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom'19884,761,395'Process and composition for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom'1988Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1988–2003Patents assigned to ADVANCED TECH MATERIALS (20)· patent assignee history
1988–2000Based in Wilton, CT, US· patent location history
1990Patents assigned to AMERICAN CYANAMID CO (1)· patent assignee history
1990Patents assigned to HUGHES AIRCRAFT CO (1)· patent assignee history
1999–2003Based in La Jolla, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ADVANCED TECH MATERIALS | 20 | 1988–2003 |
| AMERICAN CYANAMID CO | 1 | 1990 |
| HUGHES AIRCRAFT CO | 1 | 1990 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wilton, CT, US | 19 | 1988–2000 |
| La Jolla, California, US | 3 | 1999–2003 |