Inventor
CHUNG-HSUN LIN
Inventor
US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
B82YSpecific uses or applications of nanostructures27%
H01LSemiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
H10BElectronic memory devices2%
PatentTitleYear
12,568,643Nanowire transistors and methods of fabrication202612,563,810Selective backside recessing of source and drain regions202612,543,367Backside processing of fins in fin based transistor devices202612,507,475—202512,471,354Dipole threshold voltage tuning for high voltage transistor stacks202512,402,349Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact202512,328,947Substrate-less silicon controlled rectifier (SCR) integrated circuit structures202512,328,920Nanoribbon sub-fin isolation by backside Si substrate removal etch selective to source and drain epitaxy202512,317,590Substrate-free integrated circuit structures202512,294,006Gate-all-around integrated circuit structures having insulator substrate202512,288,789Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact202512,272,737Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact202512,166,031Substrate-less electrostatic discharge (ESD) integrated circuit structures202411,908,856Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact202411,869,987Gate-all-around integrated circuit structures including varactors202411,837,641Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact202311,824,116Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact202311,799,009Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact202311,417,781Gate-all-around integrated circuit structures including varactors2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to INTEL CORP (19)· patent assignee history
2022–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 19 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 19 | 2022–2026 |