LexDanaLexDanabeta
Inventor

Chando Park

Inventor
Palo Alto, CA, US

Overview

51→
Patents
2012–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 51 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for20%
H01LSemiconductor devices18%
G11CStatic stores15%
H10BElectronic memory devices12%
G11BInformation storage based on relative movement between record carrier and transducer8%
H01FMagnets7%
G01RMeasuring electric variables6%
Y10TTechnical subjects covered by former us classification4%
B82YSpecific uses or applications of nanostructures2%
G06FElectric digital data processing2%
PatentTitleYear
10,833,254Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory202010,756,259Spin orbit torque MRAM and manufacture thereof202010,740,017Dynamic memory protection202010,636,962Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data202010,547,460Message-based key generation using physical unclonable function (PUF)202010,483,457Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array201910,460,780Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory201910,460,785Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memory201910,431,734Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory201910,381,060High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array201910,311,930One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations201910,249,814Dynamic memory protection201910,134,808Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)201810,103,319Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices201810,096,649Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices201810,043,967Self-compensation of stray field of perpendicular magnetic elements20189,870,811'Physically unclonable function based on comparison of MTJ resistances'20189,824,735'System and method to generate a random number'20179,728,718'Magnetic tunnel junction (MTJ) device array'20179,721,634'Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance'20179,666,792'Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements'20179,634,237'Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices'20179,620,706'Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device'20179,614,147'Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)'20179,601,687'Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction'20179,595,666'Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials'20179,590,010'Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer'20179,583,696'Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction'20179,570,509'Magnetic tunnel junction (MTJ) device array'20179,548,446'Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)'20179,444,035'Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication'20169,385,309'Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials'20169,379,314'Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)'20169,349,939'Etch-resistant protective coating for a magnetic tunnel junction device'20169,324,939'Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)'20169,318,133'Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field'20169,269,893'Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch'20169,214,168'Method and system for providing a magnetic transducer having improved shield-to-shield spacing'20159,142,762'Magnetic tunnel junction and method for fabricating a magnetic tunnel junction'20159,064,507'Magnetic etch-stop layer for magnetoresistive read heads'20159,003,640'Method for fabricating a magnetic recording transducer'20158,958,180'Capping materials for magnetic read head sensor'20158,755,152'Method and system for providing an improved sensor stack for a recording head'20148,619,394'Magnetic tunnel junction with barrier cooling for magnetic read head'20138,611,055'Magnetic etch-stop layer for magnetoresistive read heads'20138,559,141'Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface'20138,553,371'TMR reader without DLC capping structure'20138,537,502'Method and system for providing a magnetic transducer having improved shield-to-shield spacing'20138,427,791'Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same'20138,381,391'Method for providing a magnetic recording transducer'20138,194,365'Method and system for providing a read sensor having a low magnetostriction free layer'2012

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2012–2015Patents assigned to WESTERN DIGITAL FREMONT LLC (9)· patent assignee history
2012–2014Patents assigned to PARK CHANDO (8)· patent assignee history
2012–2014Patents assigned to PAKALA MAHENDRA (6)· patent assignee history
2012–2020Based in Palo Alto, CA, US· patent location history
2013–2016Patents assigned to HGST Netherlands BV (5)· patent assignee history
2013Based in Fremont, CA, US· patent location history
2015–2020Patents assigned to QUALCOMM INC (36)· patent assignee history
2015–2018Based in San Diego, CA, US· patent location history
2015–2020Based in Irvine, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
QUALCOMM INC362015–2020
WESTERN DIGITAL FREMONT LLC92012–2015
PARK CHANDOself82012–2014
PAKALA MAHENDRA62012–2014
HGST Netherlands BV52013–2016
Locations
LocationPatentsSpan
Palo Alto, California, US212012–2020
San Diego, California, US182015–2018
Irvine, California, US112015–2020
Fremont, California, US12013