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Inventor

Hun-Hsien Chang

Inventor
Taipei, TW

Overview

18→
Patents
1996–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices73%
H02HEmergency protective circuit arrangements9%
B60KArrangement or mounting of propulsion units or of transmissions in vehicles5%
B60WConjoint control of vehicle sub-units of different type or different function5%
G07CTime or attendance registers5%
H03KPulse technique5%
PatentTitleYear
11,008,000Risk processing for vehicles having autonomous driving capabilities20217,054,122'VDDCORE to VSS ESD clamp made of core device'20066,885,529'CDM ESD protection design using deep N-well structure'20056,838,734'ESD implantation in deep-submicron CMOS technology for high-voltage-tolerant applications'20056,765,771'SCR devices with deep-N-well structure for on-chip ESD protection circuits'20046,671,153'Low-leakage diode string for use in the power-rail ESD clamp circuits'20036,576,958'ESD protection networks with NMOS-bound or PMOS-bound diode structures in a shallow-trench-isolation (STI) CMOS process'20036,566,715'Substrate-triggered technique for on-chip ESD protection circuit'20036,514,839'ESD implantation method in deep-submicron CMOS technology for high-voltage-tolerant applications with light-doping concentrations'20036,444,404'Method of fabricating ESD protection device by using the same photolithographic mask for both the ESD implantation and the silicide blocking regions'20026,388,850'Gate-coupled ESD protection circuit without transient leakage'20026,249,410'ESD protection circuit without overstress gate-driven effect'20016,144,542'ESD bus lines in CMOS IC\'s for whole-chip ESD protection'20006,011,681'Whole-chip ESD protection for CMOS ICs using bi-directional SCRs'20006,008,684'CMOS output buffer with CMOS-controlled lateral SCR devices'19996,002,568'ESD protection scheme for mixed-voltage CMOS integrated circuits'19995,959,820'Cascode LVTSCR and ESD protection circuit'19995,576,557'Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996Patents assigned to UNITED MICROELECTRONICS CORP (1)· patent assignee history
1996–2006Based in Taipei, TW· patent location history
1999–2006Patents assigned to TAIWAN SEMICONDUCTOR MFG (15)· patent assignee history
1999Patents assigned to IND TECH RES INST (1)· patent assignee history
2000–2002Based in Hsinchu, TW· patent location history
2003–2005Based in Shijr, TW· patent location history
2003Based in Hsichih, TW· patent location history
2021Patents assigned to MOTIONAL AD LLC (1)· patent assignee history
2021Based in Brookline, MA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG151999–2006
IND TECH RES INST11999
MOTIONAL AD LLC12021
UNITED MICROELECTRONICS CORP11996
Locations
LocationPatentsSpan
Taipei, TW111996–2006
Hsinchu, TW32000–2002
Shijr, TW22003–2005
Brookline, Massachusetts, US12021
Hsichih, TW12003