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Inventor

Haur-Ywh Chen

Inventor
Kaohsiung, TW

Overview

3→
Patents
2004–2006
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%
PatentTitleYear
7,122,412'Method of fabricating a necked FINFET device'20066,869,868'Method of fabricating a MOSFET device with metal containing gate structures'20056,784,071'Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2006Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history
2004–2006Based in Kaohsiung, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG32004–2006
Locations
LocationPatentsSpan
Kaohsiung, TW32004–2006