Inventor

Yung-Hung Wang

Inventor

Hsinchu County, TW

Overview

2004–2019

Patent span

Physics

Primary field (CPC G)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores24%

H10NElectric solid-state devices not otherwise provided for21%

H01LSemiconductor devices15%

G11BInformation storage based on relative movement between record carrier and transducer12%

G01RMeasuring electric variables9%

A61BDiagnosis6%

H10BElectronic memory devices6%

G06FElectric digital data processing3%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

PatentTitleYear

10,249,329Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with wedge shaped free layer2019 9,940,956Apparatus and method for reducing corrosion in capping layer of magnetic recording reader2018 9,451,898'Method and system for extracting ventricular fibrillation signals in electrocardiogram using spline interpolation with uniform phase ensembles'2016 9,380,948'System and method for quantitative analysis of respiratory sinus arrhythmia'2016 9,231,191'Magnetic tunnel junction device and method of making same'2016 9,207,290'Magnetic field sensor for sensing external magnetic field'2015 9,172,032'Magnetic tunnel junction device with perpendicular magnetization and method of fabricating the same'2015 9,166,149'Magnetic device with a substrate, a sensing block and a repair layer'2015 8,957,487'Tunneling magneto-resistor reference unit and magnetic field sensing circuit using the same'2015 8,901,687'Magnetic device with a substrate, a sensing block and a repair layer'2014 8,421,171'Magnetic random access memory'2013 8,143,683'In-situ formed capping layer in MTJ devices'2012 7,723,128'In-situ formed capping layer in MTJ devices'2010 7,606,063'Magnetic memory device'2009 7,583,529'Magnetic tunnel junction devices and magnetic random access memory'2009 7,515,458'Structure and access method for magnetic memory cell and circuit of magnetic memory'2009 6,792,585'Method and apparatus of relative datapath cell placement with structure bonding'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004Patents assigned to ARCADIA DESIGN SYSTEMS INC (1)· patent assignee history

2009–2016Patents assigned to IND TECH RES INST (10)· patent assignee history

2009–2015Based in Hsinchu, TW· patent location history

2009Based in Taoyuan County, TW· patent location history

2010–2012Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history

2010–2012Based in Dasi, TW· patent location history

2012–2016Patents assigned to WANG YUNG-HUNG (4)· patent assignee history

2013–2015Based in Hsinchu County, TW· patent location history

2015Patents assigned to HUANG SHENG-HUANG (1)· patent assignee history

2018–2019Based in San Jose, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IND TECH RES INST	10	2009–2016
WANG YUNG-HUNGself	4	2012–2016
TAIWAN SEMICONDUCTOR MFG	2	2010–2012
ARCADIA DESIGN SYSTEMS INC	1	2004
HUANG SHENG-HUANG	1	2015

Locations

Location	Patents	Span
Hsinchu County, TW	5	2013–2015
San Jose, California, US	2	2018–2019
Hsinchu, TW	2	2009–2015
Dasi, TW	2	2010–2012
Taoyuan County, TW	2	2009