Inventor
Shih-Yuan Cheng
Inventor
Palo Alto, CA, US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1050%
H01LSemiconductor devices25%
H01JElectric discharge tubes or discharge lamps13%
H10DInorganic electric semiconductor devices13%
PatentTitleYear
9,466,502'Line width roughness improvement with noble gas plasma'20169,263,284'Line width roughness improvement with noble gas plasma'20168,753,804'Line width roughness improvement with noble gas plasma'20146,977,184'Method and apparatus for nitride spacer etch process implementing in situ interferometry endpoint detection and non-interferometry endpoint monitoring'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2016Patents assigned to LAM RES CORP (4)· patent assignee history
2005Based in Foster City, CA, US· patent location history
2014Patents assigned to CHENG SHIH-YUAN (1)· patent assignee history
2014Patents assigned to FU QIAN (1)· patent assignee history
2014Patents assigned to HONG YOUN GI (1)· patent assignee history
2014Patents assigned to LIU SHENJIAN (1)· patent assignee history
2014–2016Based in Palo Alto, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LAM RES CORP | 4 | 2005–2016 |
| CHENG SHIH-YUANself | 1 | 2014 |
| FU QIAN | 1 | 2014 |
| HONG YOUN GI | 1 | 2014 |
| LIU SHENJIAN | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 3 | 2014–2016 |
| Foster City, California, US | 1 | 2005 |