Inventor
TOMOHIRO SHONAI
Inventor
JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth35%
H01LSemiconductor devices18%
H10DInorganic electric semiconductor devices18%
C23CCoating metallic material12%
C01BNon-metallic elements6%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
PatentTitleYear
12,234,571SiC single crystal substrate202512,084,7898-inch n-type SiC single crystal substrate202411,859,3138-inch SiC single crystal substrate202411,773,507SiC single crystal, and SiC ingot202311,453,957Crystal growing apparatus and crucible having a main body portion and a first portion having a radiation rate different from that of the main body portion202211,441,235Crystal growing apparatus and crucible having a main body portion and a low radiation portion2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2023Patents assigned to SHOWA DENKO KK (3)· patent assignee history
2022–2025Based in JP· patent location history
2023–2025Patents assigned to RESONAC CORP (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RESONAC CORP | 4 | 2023–2025 |
| SHOWA DENKO KK | 3 | 2022–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 6 | 2022–2025 |