Inventor

Kenneth J. McCullough

Inventor

Fishkill, NY, US

Overview

44→

Patents

1998–2014

Patent span

Electricity

Primary field (CPC H)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%

B08BCleaning in general17%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices6%

C11DDetergent compositions5%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

Y10TTechnical subjects covered by former us classification5%

C23CCoating metallic material3%

F15CFluid-circuit elements predominantly used for computing or control purposes2%

F16KValves2%

PatentTitleYear

8,828,143'Apparatus and method for the rapid thermal control of a work piece in liquid or supercritical fluid'2014 8,388,758'Apparatus and method for the rapid thermal control of a work piece in liquid or supercritical fluid'2013 7,485,964'Dielectric material'2009 7,332,436'Process of removing residue from a precision surface using liquid or supercritical carbon dioxide composition'2008 7,288,155'Method for the rapid thermal control of a work piece in liquid or supercritical fluid'2007 7,081,208'Method to build a microfilter'2006 7,056,837'Process of insulating a semiconductor device using a polymeric material'2006 6,997,197'Apparatus and method for rapid thermal control of a workpiece in liquid or dense phase fluid'2006 6,953,042'Apparatus and process for supercritical carbon dioxide phase processing'2005 6,927,393'Method of in situ monitoring of supercritical fluid process conditions'2005 6,892,741'Apparatus and process for supercritical carbon dioxide phase processing'2005 6,890,855'Process of removing residue material from a precision surface'2005 6,875,286'Solid CO2 cleaning'2005 6,838,015'Liquid or supercritical carbon dioxide composition'2005 6,834,671'Check valve for micro electro mechanical structure devices'2004 6,821,488'Sample holding chuck for use in reactor and reactor using same'2004 6,739,346'Apparatus for cleaning filters'2004 6,736,906'Turbine part mount for supercritical fluid processor'2004 6,683,008'Process of removing ion-implanted photoresist from a workpiece'2004 6,673,521'Supercritical fluid(SCF) silylation process'2004 6,656,666'Topcoat process to prevent image collapse'2003 6,653,233'Process of providing a semiconductor device with electrical interconnection capability'2003 6,622,507'Electromechanical device and a process of preparing same'2003 6,584,989'Apparatus and method for wet cleaning'2003 6,579,464'Fixtures for processing a workpiece in a supercritical fluid'2003 6,561,220'Apparatus and method for increasing throughput in fluid processing'2003 6,558,475'Process for cleaning a workpiece using supercritical carbon dioxide'2003 6,509,136'Process of drying a cast polymeric film disposed on a workpiece'2003 6,457,480'Process and apparatus for cleaning filters'2002 6,454,869'Process of cleaning semiconductor processing, handling and manufacturing equipment'2002 6,451,375'Process for depositing a film on a nanometer structure'2002 6,425,956'Process for removing chemical mechanical polishing residual slurry'2002 6,398,875'Process of drying semiconductor wafers using liquid or supercritical carbon dioxide'2002 6,346,484'Method for selective extraction of sacrificial place-holding material used in fabrication of air gap-containing interconnect structures'2002 6,254,796'Selective etching of silicate'2001 6,200,891'Removal of dielectric oxides'2001 6,150,282'Selective removal of etching residues'2000 6,117,796'Removal of silicon oxide'2000 6,066,267'Etching of silicon nitride'2000 6,033,996'Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide'2000 5,976,264'Removal of fluorine or chlorine residue by liquid CO.sub.2'1999 5,965,465'Etching of silicon nitride'1999 5,908,510'Residue removal by supercritical fluids'1999 5,780,363'Etching composition and use thereof'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2014Patents assigned to IBM (43)· patent assignee history

1998–2014Based in Fishkill, NY, US· patent location history

2013–2014Patents assigned to COTTE JOHN M (2)· patent assignee history

2013–2014Patents assigned to GOLDFARB DARIO L (2)· patent assignee history

2013–2014Patents assigned to MCCULLOUGH KENNETH J (2)· patent assignee history

2013–2014Patents assigned to MOREAU WAYNE M (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	43	1998–2014
COTTE JOHN M	2	2013–2014
GOLDFARB DARIO L	2	2013–2014
MCCULLOUGH KENNETH Jself	2	2013–2014
MOREAU WAYNE M	2	2013–2014

Locations

Location	Patents	Span
Fishkill, New York, US	44	1998–2014