LexDanaLexDanabeta
Inventor

Yoshimi Kawanami

Inventor
Kokubunji, JP

Overview

79→
Patents
1987–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 79 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps54%
G01NInvestigating or analysing materials by determining their chemical or physical properties13%
G09GArrangements or circuits for control of indicating devices using static means to present variable information9%
H05KPrinted circuits3%
A63FCard, board, or roulette games2%
G07FCoin-freed or like apparatus2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
Y02WClimate change mitigation technologies related to wastewater treatment or waste management2%
A01GHorticulture1%
PatentTitleYear
11,081,312Method of manufacturing emitter, emitter, and focused ion beam apparatus202110,971,329Field ionization source, ion beam apparatus, and beam irradiation method202110,840,070Ion beam device and cleaning method for gas field ion source202010,790,112Focused ion beam apparatus202010,658,143Method of manufacturing emitter202010,651,006Ion beam apparatus202010,636,623Ion beam device202010,366,858Ion beam device201910,304,656Ion beam device201910,211,022Ion beam apparatus and ion beam irradiation method201910,163,602Ion beam system20189,761,407'Ion beam device and emitter tip adjustment method'20179,640,360'Ion source and ion beam device using same'20179,196,453'Gas field ionization ion source and ion beam device'20159,111,716'Charged particle microscope'20159,087,675'Emitter, gas field ion source, and ion beam device'20159,058,959'Scanning ion microscope and secondary particle control method'20159,018,597'Gas field ionization ion source and ion beam apparatus'20158,981,315'Ion beam device having gas introduction port disposed on structure maintained at ground potential'20158,847,173'Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same'20148,809,801'Gas field ionization ion source and ion beam device'20148,569,719'Method and apparatus for specimen fabrication'2013RE044445'Method for forming partitions of plasma display panel by using sandblasting processing'20138,405,053'Method and apparatus for specimen fabrication'20137,999,240'Method and apparatus for specimen fabrication'2011RE042405'Method for forming partitions of plasma display panel by using sandblasting process'20117,911,419'Plasma display panel driving method and plasma display apparatus'20117,898,510'Display device and display panel device'20117,791,050'Method and apparatus for specimen fabrication'20107,755,287'Display panel device with a light-permeable front sheet'20107,728,792'Mesh-pattern partitioned plasma display panel'2010RE041312'Method for forming partitions of plasma display panel by using sandblasting process'20107,561,152'Display device and display panel device'20097,531,952'Display panel device'20097,525,108'Focused ion beam apparatus for specimen fabrication'20097,492,081'Display panel module and method for manufacturing the same'20097,482,755'Plasma display panel and plasma display device'20097,450,090'Plasma display panel and imaging device using the same'2008RE040502'Plasma display panel and method for manufacturing the same'20087,397,052'Method and apparatus for specimen fabrication'20087,397,051'Method and apparatus for specimen fabrication'20087,397,050'Method and apparatus for specimen fabrication'20087,379,032'Plasma display device'20087,332,865'Display panel device with a light-permeable front sheet'20087,233,107'Mesh-pattern partitioned plasma display panel'20077,176,458'Method and apparatus for specimen fabrication'20077,138,628'Method and apparatus for specimen fabrication'20067,123,217'Method for driving plasma display panel'20067,119,479'Display panel device'20067,116,059'Display device and display panel device'20067,071,901'Plasma display panel and imaging device using the same'20067,071,475'Method and apparatus for specimen fabrication'20066,919,670'Rib structure for display device and its manufacture process'20056,855,026'Method for forming partitions of plasma display panel by using sandblasting process'20056,844,684'Front film for flat display panel and flat display device using the same'20056,828,566'Method and apparatus for specimen fabrication'20046,822,627'Plasma display panel and imaging device using the same'20046,690,342'Plasma display device'20046,608,441'Plasma display panel and method for manufacturing the same'20036,583,426'Projection ion beam machining apparatus'20036,538,254'Method and apparatus for sample fabrication'20036,333,599'Plasma display system'20016,274,876'Inspection apparatus and method using particle beam and the particle-beam-applied apparatus'20016,140,644'Inspection apparatus and method using a particle beam'20005,910,871'Magnetic head having track width specified by grooves formed with projection ion beam'19995,825,035'Processing method and apparatus using focused ion beam generating means'19985,767,516'Electron microscope and sample observing method using the same'19985,583,344'Process method and apparatus using focused ion beam generating means'19965,554,257'Method of treating surfaces with atomic or molecular beam'19965,532,494'Treatment and observation apparatus using scanning probe'19965,504,340'Process method and apparatus using focused ion beam generating means'19965,120,925'Methods for device transplantation'19925,077,266'Method of forming weak-link Josephson junction, and superconducting device employing the junction'19915,065,034'Charged particle beam apparatus'19914,939,364'Specimen or substrate cutting method using focused charged particle beam and secondary ion spectroscopic analysis method utilizing the cutting method'19904,936,968'Ion-beam machining method and apparatus'19904,755,685'Ion micro beam apparatus'19884,733,134'Liquid metal ion source with pulse generator control'19884,710,632'Ion microbeam apparatus'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–2013Patents assigned to HITACHI LTD (37)· patent assignee history
1988–2013Based in Kokubunji, JP· patent location history
1990–1992Based in Fuchu, JP· patent location history
2003–2011Patents assigned to FUJITSU HITACHI PLASMA DISPLAY (25)· patent assignee history
2003–2011Based in Kawasaki, JP· patent location history
2004–2011Based in Miyazaki, JP· patent location history
2013–2015Patents assigned to KAWANAMI YOSHIMI (7)· patent assignee history
2014–2021Patents assigned to HITACHI HIGH TECH CORP (16)· patent assignee history
2015–2021Based in Tokyo, JP· patent location history
2018–2021Patents assigned to HITACHI HIGH TECH SCIENCE CORP (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD371987–2013
FUJITSU HITACHI PLASMA DISPLAY252003–2011
HITACHI HIGH TECH CORP162014–2021
KAWANAMI YOSHIMIself72013–2015
HITACHI HIGH TECH SCIENCE CORP52018–2021
Locations
LocationPatentsSpan
Kokubunji, JP251988–2013
Tokyo, JP182015–2021
Kawasaki, JP162003–2011
Miyazaki, JP82004–2011
Fuchu, JP51990–1992