Inventor
Thomas Ernst
Inventor
Morette, FR
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
B82YSpecific uses or applications of nanostructures13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H01LSemiconductor devices6%
H10BElectronic memory devices6%
B81BMicrostructural devices or systems, e.g. micromechanical devices4%
Y10TTechnical subjects covered by former us classification4%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
10,670,507Electromechanical detection device, particularly for gravimetric detection, and method for manufacturing the device202010,216,698Analysis device including a MEMS and/or NEMS network20199,601,352'Method of localized annealing of semi-conducting elements using a reflective area'20179,382,108'Nanowire sensor device'20169,053,976'Structure and production process of a microelectronic 3D memory device of flash NAND type'20159,019,760'Multilevel memory device'20158,847,395'Microelectronic device having metal interconnection levels connected by programmable vias'20148,656,584'Method of fabricating an electromechanical component using graphene'20148,502,318'SRAM memory cell provided with transistors having a vertical multichannel structure'20138,492,232'Production of a transistor gate on a multibranch channel structure and means for isolating this gate from the source and drain regions'20138,367,487'Structure and method for fabricating a microelectronic device provided with one or more quantum wires able to form one or more transistor channels'20138,343,780'Method of stressing a thin pattern'20138,288,823'Double-gate transistor structure equipped with a multi-branch channel'20128,252,636'Method of manufacturing nanowires parallel to the supporting substrate'20128,246,775'Method of implanting RFID tags in corrugated paperboard'20128,173,545'Method for the fabrication of a transistor gate using at least one electron beam'20128,088,674'Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes'20127,910,917'Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels'20117,902,575'Field-effect microelectronic device, capable of forming one or several transistor channels'20117,879,690'Method of fabricating a microelectronic structure of a semiconductor on insulator type with different patterns'20117,820,523'Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor'20107,518,195'Field-effect microelectronic device, capable of forming one or several transistor channels'20096,450,381'Device and method for guiding a transversely stable material web'20024,862,324'Switchgear enclosure and method of fabrication'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2020Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (18)· patent assignee history
2009–2013Based in Charnecles, FR· patent location history
2010Based in Florette, FR· patent location history
2011–2020Based in Morette, FR· patent location history
2011Based in Charnècles, FR· patent location history
2012–2019Patents assigned to ERNST THOMAS (15)· patent assignee history
2012–2013Patents assigned to BARBE JEAN-CHARLES (2)· patent assignee history
2012Based in Oerlinghausen, DE· patent location history
2014–2019Patents assigned to ANDREUCCI PHILIPPE (3)· patent assignee history
2014–2017Patents assigned to COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 18 | 2009–2020 |
| ERNST THOMASself | 15 | 2012–2019 |
| ANDREUCCI PHILIPPE | 3 | 2014–2019 |
| COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | 3 | 2014–2017 |
| BARBE JEAN-CHARLES | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Morette, FR | 17 | 2011–2020 |
| Charnecles, FR | 2 | 2009–2013 |
| Oerlinghausen, DE | 1 | 2012 |
| Charnècles, FR | 1 | 2011 |
| Florette, FR | 1 | 2010 |