Inventor

GERBEN DOORNBOS

Inventor

BE

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 93 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices28%

H01LSemiconductor devices25%

H10BElectronic memory devices13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

B82YSpecific uses or applications of nanostructures7%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%

H10NElectric solid-state devices not otherwise provided for4%

H10KOrganic electric solid-state devices3%

G11CStatic stores2%

C01BNon-metallic elements0%

PatentTitleYear

12,588,348Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor2026 12,563,989Semiconductor device and method for forming the same2026 12,563,781Semiconductor device and manufacturing method thereof2026 12,543,323Ferroelectric memory device with relaxation layers2026 12,538,522Access transistor including a metal oxide barrier layer and methods for forming the same2026 12,538,525Semiconductor device and method of manufacturing semiconductor device2026 12,513,908Vertically stacked FeFETs with common channel2025 12,512,410Integrated chip having a buried power rail2025 12,500,168Semiconductor device including back side power supply circuit2025 12,456,676Semiconductor device including first and second transistor channels2025 12,453,295Semiconductor structure and manufacturing method thereof2025 12,414,303Ferroelectric device and wave computing device2025 12,402,355Access transistor including a metal oxide barrier layer and methods for forming the same2025 12,369,360Protrusion field-effect transistor and methods of making the same2025 12,362,015Memory array structure2025 12,363,970Germanium tin oxide-containing semiconductor device and methods for forming the same2025 12,324,360Semiconductor structure and method of forming the same2025 12,317,586Semiconductor device having fin structures with unequal channel heights and manufacturing method thereof2025 12,310,063Method for forming semiconductor device with transistors on opposite sides of a dielectric layer2025 12,300,550Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS2025 12,238,914Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the same2025 12,230,716Semiconductor structure with thin film transistor2025 12,206,024Transistors including crystalline raised active regions and methods for forming the same2025 12,191,375Ferroelectric channel field effect transistor2025 12,166,084Semiconductor device and manufacturing method thereof2024 12,159,942Semiconductor device and method for manufacturing the same2024 12,154,903Fin-based field effect transistors2024 12,137,621Intercalated metal/dielectric structure for nonvolatile memory devices2024 12,112,998Semiconductor device and method for forming the same2024 12,089,423Gate all around semiconductor structure with diffusion break2024 12,069,874Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors2024 12,057,489Ferroelectric field effect transistor2024 12,051,702Crystalline semiconductor layer formed in BEOL processes2024 12,040,270Semiconductor device including back side power supply circuit2024 12,027,632Semiconductor structure with barrier and method for manufacturing the same2024 12,010,856Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor2024 12,002,860Semiconductor device and fabrication method thereof2024 11,990,514Protrusion field-effect transistor and methods of making the same2024 11,967,647Localized heating in laser annealing process2024 11,955,551Semiconductor device and manufacturing method thereof2024 11,956,940Vertical heterostructure semiconductor memory cell and methods for making the same2024 11,949,020Transistor, integrated circuit, and manufacturing method2024 11,942,147Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same2024 11,916,113Semiconductor device and manufacturing method thereof2024 11,869,975Thin-film transistors and method for manufacturing the same2024 11,856,874Semiconductor structure and manufacturing method thereof2023 11,848,385Localized protection layer for laser annealing process2023 11,830,947Method of manufacturing a semiconductor device and a semiconductor device2023 11,791,420Semiconductor device and method for manufacturing the same2023 11,791,395Ferroelectric field effect transistor2023 11,784,219Method for manufacturing semiconductor device with spacer layer2023 11,785,780Semiconductor device and method of fabricating the same2023 11,784,234Ferroelectric channel field effect transistor2023 11,764,289Method of manufacturing a semiconductor device and a semiconductor device2023 11,751,487Semiconductor device and method of forming the same2023 11,742,285Semiconductor device including back side power supply circuit2023 11,742,292Integrated chip having a buried power rail2023 11,728,244Semiconductor device and method for forming the same2023 11,728,418Tunnel field-effect transistor with reduced trap-assisted tunneling leakage2023 11,728,222Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS2023 11,723,291Intercalated metal/dielectric structure for nonvolatile memory devices2023 11,710,775Ferroelectric field effect transistor2023 11,682,587Semiconductor device and manufacturing method thereof2023 11,677,004Strained channel field effect transistor2023 11,672,110Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the same2023 11,659,721Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors2023 11,653,507Gate all around semiconductor structure with diffusion break2023 11,637,067Semiconductor device including back side power supply circuit2023 11,600,616Semiconductor device including FINFETs having different channel heights2023 11,586,885Synapse-inspired memory element for neuromorphic computing2023 11,587,786Crystalline semiconductor layer formed in BEOL processes2023 11,574,927Semiconductor devices and method for manufacturing the same2023 11,569,244Vertical heterostructure semiconductor memory cell and methods for making the same2023 11,569,352Protrusion field-effect transistor and methods of making the same2023 11,557,678Transistor, integrated circuit, and manufacturing method2023 11,557,726Wafers for use in aligning nanotubes and methods of making and using the same2023 11,482,609Ferroelectric channel field effect transistor2022 11,450,748Semiconductor device and manufacturing method thereof2022 11,437,594Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor2022 11,430,512Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same2022 11,411,103Tunnel field-effect transistor with reduced trap-assisted tunneling leakage2022 11,387,362Semiconductor device and manufacturing method thereof2022 11,349,022Tunnel field-effect transistor with reduced trap-assisted tunneling leakage2022 11,322,519Semiconductor device and method of fabricating the same2022 11,309,417Method of manufacturing a semiconductor device and a semiconductor device2022 11,302,820Localized protection layer for laser annealing process2022 11,276,832Semiconductor structure with diffusion break and method2022 11,264,498Semiconductor device and method of fabricating the same2022 11,264,506Semiconductor device and manufacturing method thereof2022 11,257,818Fin-based field effect transistors2022 11,195,913Semiconductor device including fin structure and manufacturing method thereof2021 11,165,032Field effect transistor using carbon nanotubes2021 11,164,939Tunnel field-effect transistor and method for forming the same2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (93)· patent assignee history

2021–2026Based in BE· patent location history

2022–2024Based in TW· patent location history

2022–2023Based in CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	93	2021–2026

Locations

Location	Patents	Span
BE	80	2021–2026
TW	11	2022–2024
CN	2	2022–2023