Inventor

Kazuhiro Fujikawa

Inventor
Osaka, JP

Overview

28→
Patents
1996–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 28 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems10%
H03KPulse technique10%
H03FAmplifiers6%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
B66FHoisting, lifting, hauling or pushing, not otherwise provided for, e.g. devices which apply a lifting or pushing force directly to the surface of a load2%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
C23FNon-mechanical removal of metallic material from surface2%
PatentTitleYear
10,665,881Redox flow battery system, pump control unit, and method for operating redox flow battery20209,685,885'Power conversion apparatus with an inverted-voltage generation circuit'20179,154,052'Power inverter circuit having switching elements'20159,017,856'Stacked battery with electrode having break portion'20159,007,738'Transistor protection circuit'20158,917,142'Switching circuit and envelope signal amplifier'20148,878,604'Switching circuit and envelope signal amplifier'20148,766,699'Switching circuit'20148,760,223'Switching circuit'20148,697,555'Method of producing semiconductor device and semiconductor device'20148,643,065'Semiconductor device and method for manufacturing the same'20148,624,303'Field effect transistor'20148,623,752'Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor device'20148,557,711'Etching solution composition for metal films'20138,536,930'Switching circuit'20138,043,949'Method of manufacturing silicon carbide semiconductor device'20117,867,882'Method of manufacturing silicon carbide semiconductor device'20117,759,211'Method of fabricating semiconductor device'20107,750,377'Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors'20107,671,387'Lateral junction field effect transistor and method of manufacturing the same'20107,671,388'Lateral junction field effect transistor and method of manufacturing the same'20107,420,232'Lateral junction field effect transistor and method of manufacturing the same'20087,364,978'Method of fabricating semiconductor device'20087,321,142'Field effect transistor'20087,282,760'Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors'20077,049,644'Lateral junction field effect transistor and method of manufacturing the same'20066,877,945'Forklift'20055,495,464'Optical data recording/reproducing apparatus'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2013Based in Tokyo, JP· patent location history
2005Based in Shiga, JP· patent location history
2006–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (24)· patent assignee history
2006–2020Based in Osaka, JP· patent location history
2010Based in Osaka-shi, JP· patent location history
2013–2015Patents assigned to FUJIKAWA KAZUHIRO (10)· patent assignee history
2013–2014Patents assigned to OHIRA TAKASHI (4)· patent assignee history
2013–2014Patents assigned to SHIGA NOBUO (4)· patent assignee history
2014–2015Patents assigned to NAT UNIV CORP TOYOHASHI UNIV (6)· patent assignee history
2015Based in Ibaraki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES242006–2020
FUJIKAWA KAZUHIROself102013–2015
NAT UNIV CORP TOYOHASHI UNIV62014–2015
OHIRA TAKASHI42013–2014
SHIGA NOBUO42013–2014
Locations
LocationPatentsSpan
Osaka, JP232006–2020
Tokyo, JP21996–2013
Ibaraki, JP12015
Osaka-shi, JP12010
Shiga, JP12005