LexDanaLexDanabeta
Inventor

Makoto Miyoshi

Inventor
Nagoya, JP

Overview

51→
Patents
1986–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 51 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
C30BSingle-crystal growth11%
H01LSemiconductor devices10%
B62DMotor vehicles9%
H10NElectric solid-state devices not otherwise provided for9%
G02BOptical elements, systems or apparatus4%
C23CCoating metallic material3%
Y10TTechnical subjects covered by former us classification3%
B21DWorking or processing of sheet metal or metal tubes, rods or profiles without essentially removing material1%
PatentTitleYear
11,001,349Personal watercraft20219,382,641'Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device'20169,171,914'Semiconductor device'20159,090,993'Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate'20159,024,325'Epitaxial substrate for semiconductor element, semiconductor element, PN junction diode, and method for manufacturing an epitaxial substrate for semiconductor element'20158,969,880'Epitaxial substrate and method for manufacturing epitaxial substrate'20158,946,723'Epitaxial substrate and method for manufacturing epitaxial substrate'20158,890,208'Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device'20148,872,226'Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device'20148,860,084'Epitaxial substrate for semiconductor device, semiconductor device, method of manufacturing epitaxial substrate for semiconductor device, and method of manufacturing semiconductor device'20148,853,735'Epitaxial substrate for semiconductor device and semiconductor device'20148,853,828'Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device'20148,853,829'Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device'20148,648,351'Epitaxial substrate and method for manufacturing epitaxial substrate'20148,598,626'Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure'20138,471,265'Epitaxial substrate with intermediate layers for reinforcing compressive strain in laminated composition layers and manufacturing method thereof'20138,415,690'Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element'20138,410,552'Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device'20138,404,045'Method for manufacturing group III nitride single crystals'20138,378,386'Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device'20138,350,290'Light-receiving device and manufacturing method for a light-receiving device'20138,192,094'Optical module'20128,044,485'Semiconductor device'20118,026,718'Magnetic sensor, hall element, hall IC, magnetoresistive effect element, method of fabricating hall element, and method of fabricating magnetoresistive effect element'20118,008,689'MIS gate structure type HEMT device and method of fabricating MIS gate structure type HEMT device'20117,982,241'Epitaxial substrate, semiconductor device substrate, and HEMT device'20117,648,289'Module having a handle to be operated to attach the module to a cage'20107,517,160'Optical module'20097,261,475'Data link module'20077,199,408'Semiconductor multilayer structure, semiconductor device and HEMT device'20077,135,347'Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method'20066,306,673'Thermoelectric conversion module and method of manufacturing the same'20016,235,981'P-type thermoelectric converting substance and method of manufacturing the same'20016,005,182'Thermoelectric conversion module and method of manufacturing the same'19995,994,637'Thermoelectric conversion module and method of manufacturing the same'19995,965,841'Thermoelectric conversion material and a process for producing the same'19995,952,728'Thermoelectric conversion module having channels filled with semiconducting material and insulating fillers'19995,912,429'High temperature thermoelectric material and its production method'19995,886,291'Thermoelectric conversion module and method of manufacturing the same'19995,705,434'Method of manufacturing thermoelectric conversion module'19985,636,048'Equalizing amplifier, receiver using the same and preamplifier'19974,884,648'Variable assist power steering system with varying power assist characteristic'19894,875,542'Hydraulic system for variable assist power steering system'19894,862,985'Variable assist power steering system with varying power assist with vehicle speed'19894,860,846'Vehicle speed responsive variable assist power steering system'19894,852,462'Operating noise-free fluid flow distributor circuit for variable assist power steering system'19894,846,296'Hydraulic fluid pressure control system for use with power assist steering'19894,830,130'Power steering system'19894,771,841'Variable power assist steering system for vehicle'19884,655,072'Clamp'19874,624,335'Fail safe steering effort control system'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2001Patents assigned to NISSAN MOTOR (15)· patent assignee history
1986–2012Based in Kawasaki, JP· patent location history
1998–2016Patents assigned to NGK INSULATORS LTD (35)· patent assignee history
1998–2016Based in Nagoya, JP· patent location history
2006–2015Based in Inazawa, JP· patent location history
2007Based in Yokohama, JP· patent location history
2012–2016Patents assigned to MIYOSHI MAKOTO (13)· patent assignee history
2013–2016Patents assigned to TANAKA MITSUHIRO (11)· patent assignee history
2013–2015Patents assigned to SUMIYA SHIGEAKI (10)· patent assignee history
2021Based in Kobe, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NGK INSULATORS LTD351998–2016
NISSAN MOTOR151986–2001
MIYOSHI MAKOTOself132012–2016
TANAKA MITSUHIRO112013–2016
SUMIYA SHIGEAKI102013–2015
Locations
LocationPatentsSpan
Nagoya, JP181998–2016
Inazawa, JP172006–2015
Kawasaki, JP111986–2012
Kobe, JP12021
Yokohama, JP12007