Inventor
Jeff Zhiqiang Wu
Inventor
Meridian, ID, US
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests24%
H10BElectronic memory devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B82YSpecific uses or applications of nanostructures6%
G11CStatic stores6%
PatentTitleYear
6,653,220'Advance metallization process'20036,476,433'Semiconductor interconnection structure and method'20026,404,018'Static memory cell and method of manufacturing a static memory cell'20026,309,935'Methods of forming field effect transistors'20016,281,109'Advance metallization process'20016,184,539'Static memory cell and method of forming static memory cell'20016,172,387'Semiconductor interconnection structure and method'20016,144,068'Transistor device structures, and methods for forming such structures'20006,140,685'Static memory cell and method of manufacturing a static memory cell'20006,066,548'Advance metallization process'20006,063,673'Transistor device structures, and methods for forming such structures'20006,022,783'NMOS field effect transistors and methods of forming NMOS field effect transistors'20005,976,926'Static memory cell and method of manufacturing a static memory cell'19995,955,760'Transistor device structures'19995,897,357'Method of forming a field effect transistor and method of forming CMOS integrated circuitry'19995,811,338'Method of making an asymmetric transistor'19985,780,906'Static memory cell and method of manufacturing a static memory cell'19985,773,358'Method of forming a field effect transistor and method of forming CMOS integrated circuitry'19985,770,497'Method of manufacturing a novel static memory cell having a tunnel diode'19985,757,051'Static memory cell and method of manufacturing a static memory cell'19985,721,443'NMOS field effect transistors and methods of forming NMOS field effect transistors'19985,672,536'Method of manufacturing a novel static memory cell having a tunnel diode'19975,629,546'Static memory cell and method of manufacturing a static memory cell'19975,571,733'Method of forming CMOS integrated circuitry'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2003Patents assigned to MICRON TECHNOLOGY INC (24)· patent assignee history
1996–2003Based in Meridian, ID, US· patent location history
1998–2000Based in Boise, ID, US· patent location history
2001–2002Based in Plano, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 24 | 1996–2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Meridian, ID, US | 20 | 1996–2003 |
| Plano, Texas, US | 2 | 2001–2002 |
| Boise, ID, US | 2 | 1998–2000 |