Inventor
Russell J. Low
Inventor
Rowley, MA, US
Overview
Patents· 42 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps35%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
Y02PClimate change mitigation technologies in the production or processing of goods9%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
H05HPlasma technique4%
H01BCables3%
H01LSemiconductor devices3%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
C23CCoating metallic material2%
PatentTitleYear
9,863,032'Techniques for processing a substrate'20189,006,688'Techniques for processing a substrate using a mask'20158,937,004'Apparatus and method for controllably implanting workpieces'20158,768,040'Substrate identification and tracking through surface reflectance'20148,756,021'Method and system for in-situ monitoring of cathode erosion and predicting cathode lifetime'20148,685,846'Technique for processing a substrate'20148,598,547'Handling beam glitches during ion implantation of workpieces'20138,461,030'Apparatus and method for controllably implanting workpieces'20138,461,556'Using beam blockers to perform a patterned implant of a workpiece'20138,455,847'Mask health monitor using a faraday probe'20138,455,760'Interfacing two insulation parts in high voltage environment'20138,330,127'Flexible ion source'20128,216,923'Integrated shadow mask/carrier for patterned ion implantation'20128,164,068'Mask health monitor using a faraday probe'20128,153,466'Mask applied to a workpiece'20128,143,604'Insulator system for a terminal structure of an ion implantation system'20128,084,293'Continuously optimized solar cell metallization design through feed-forward process'20117,999,239'Techniques for reducing an electrical stress in an acceleration/deceleraion system'20118,000,080'Particle trap'20117,887,034'Indirectly heated cathode clamp system and method'20117,863,531'Techniques for making high voltage connections'20117,863,520'Interfacing two insulation parts in high voltage environment'20117,842,934'Terminal structures of an ion implanter having insulated conductors with dielectric fins'20107,821,213'Techniques for controlling a charged particle beam'20107,820,986'Techniques for controlling a charged particle beam'20107,799,999'Insulated conducting device with multiple insulation segments'20107,675,046'Terminal structure of an ion implanter'20107,586,110'Techniques for detecting ion beam contamination in an ion implantation system and interlocking same'20097,576,337'Power supply for an ion implantation system'20097,544,958'Contamination reduction during ion implantation'20097,528,391'Techniques for reducing contamination during ion implantation'20097,491,947'Technique for improving performance and extending lifetime of indirectly heated cathode ion source'20097,482,598'Techniques for preventing parasitic beamlets from affecting ion implantation'20097,476,877'Wafer charge monitoring'20097,476,878'Techniques for reducing effects of photoresist outgassing'20097,459,704'Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms'20087,446,326'Technique for improving ion implanter productivity'20087,402,820'Ion beam contamination determination'20087,361,913'Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control'20087,102,139'Source arc chamber for ion implanter having repeller electrode mounted to external insulator'20067,005,657'Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery'20066,984,831'Gas flow restricting cathode system for ion implanter and related method'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2015Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT (40)· patent assignee history
2006–2015Based in Rowley, MA, US· patent location history
2011–2014Patents assigned to GUPTA ATUL (5)· patent assignee history
2012–2015Patents assigned to LOW RUSSELL J (12)· patent assignee history
2012–2014Patents assigned to WEAVER WILLIAM T (4)· patent assignee history
2012–2014Patents assigned to BATEMAN NICHOLAS P T (3)· patent assignee history
2014–2015Based in Dellwood, MN, US· patent location history
2018Based in Bellemead, NH, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VARIAN SEMICONDUCTOR EQUIPMENT | 40 | 2006–2015 |
| LOW RUSSELL Jself | 12 | 2012–2015 |
| GUPTA ATUL | 5 | 2011–2014 |
| WEAVER WILLIAM T | 4 | 2012–2014 |
| BATEMAN NICHOLAS P T | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Rowley, Massachusetts, US | 39 | 2006–2015 |
| Dellwood, Minnesota, US | 2 | 2014–2015 |
| Bellemead, NH, US | 1 | 2018 |