Inventor
Yong-Shiuan Tsair
Inventor
Tainan, TW
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices24%
H01LSemiconductor devices23%
H10DInorganic electric semiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
G11CStatic stores3%
H10NElectric solid-state devices not otherwise provided for3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%
PatentTitleYear
11,133,188Non-volatile memory semiconductor device with electrostatic discharge protection, planarization layers, and manufacturing method thereof202111,127,827Control gate strap layout to improve a word line etch process window202111,107,982RRAM structure202111,069,695Floating gate test structure for embedded memory device202111,037,941Method for forming an integrated circuit and an integrated circuit202111,004,858Semiconductor device and manufacturing method thereof202110,978,463Semiconductor device and manufacturing method thereof202110,943,913Strap-cell architecture for embedded memory202110,930,333Embedded ferroelectric memory cell202110,879,250Semiconductor structure for memory device and method for forming the same202010,861,553Device-region layout for embedded flash202010,763,270Method for forming an integrated circuit and an integrated circuit202010,680,002Method to reduce kink effect in semiconductor devices202010,541,245Semiconductor device and manufacturing method thereof202010,510,544Non-volatile memory semiconductor device and manufacturing method thereof201910,269,815Semiconductor device and manufacturing method thereof201910,269,818Semiconductor device and manufacturing method thereof20199,997,524Semiconductor memory device and manufacturing method thereof20189,929,167'Semiconductor device and manufacturing method thereof'20189,728,543'Semiconductor structure and fabricating method thereof'20179,646,980'Logic compatible flash memory cells'20179,287,282'Method of forming a logic compatible flash memory'20169,287,280'Method to improve memory cell erasure'20169,252,150'High endurance non-volatile memory cell'20169,159,735'Architecture to improve cell size for compact array of split gate flash cell with buried common source structure'20158,928,060'Architecture to improve cell size for compact array of split gate flash cell'20158,890,232'Methods and apparatus for non-volatile memory cells with increased programming efficiency'20148,669,607'Methods and apparatus for non-volatile memory cells with increased programming efficiency'20147,683,698'Apparatus and method for increasing charge pump efficiency'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (5)· patent assignee history
2010–2021Based in Tainan, TW· patent location history
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (24)· patent assignee history
2019Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 24 | 2015–2021 |
| TAIWAN SEMICONDUCTOR MFG | 5 | 2010–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 28 | 2010–2021 |
| Hsinchu, TW | 1 | 2019 |