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Inventor

Tai-young Ko

Inventor
Seongnam-si, KR

Overview

6→
Patents
2009–2016
Patent span
Physics
Primary field (CPC G)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores55%
H10BElectronic memory devices18%
H10DInorganic electric semiconductor devices18%
H01LSemiconductor devices9%
PatentTitleYear
9,431,071'Bit-line sense amplifier capable of compensating mismatch between transistors, and semiconductor memory device including the same'20168,891,324'Memory device from which dummy edge memory block is removed'20148,482,951'Memory device from which dummy edge memory block is removed'20138,467,216'Semiconductor memory device for reducing bit line coupling noise'20137,688,651'Methods and devices for regulating the timing of control signals in integrated circuit memory devices'20107,561,488'Wordline driving circuit and method for semiconductor memory'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2016Patents assigned to SAMSUNG ELECTRONICS CO LTD (6)· patent assignee history
2009–2016Based in Seongnam-si, KR· patent location history
2010Based in Gyeonggi-do, KR· patent location history
2013–2014Patents assigned to KIM SANG-YUN (3)· patent assignee history
2013–2014Patents assigned to KO TAI-YOUNG (3)· patent assignee history
2013–2014Patents assigned to JANG SEONG-JIN (2)· patent assignee history
2013–2014Patents assigned to KIM JOUNG-YEAL (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD62009–2016
KIM SANG-YUN32013–2014
KO TAI-YOUNGself32013–2014
JANG SEONG-JIN22013–2014
KIM JOUNG-YEAL22013–2014
Locations
LocationPatentsSpan
Seongnam-si, KR52009–2016
Gyeonggi-do, KR12010