Inventor
Yoshitaka Yokota
Inventor
San Jose, CA, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1039%
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices11%
H10BElectronic memory devices9%
H01JElectric discharge tubes or discharge lamps7%
F27DDetails or accessories of furnaces, kilns, ovens or retorts, in so far as they are of kinds occurring in more than one kind of furnace5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
C23CCoating metallic material2%
PatentTitleYear
9,530,898'Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof'20169,431,237'Post treatment methods for oxide layers on semiconductor devices'20169,117,661'Method of improving oxide growth rate of selective oxidation processes'20159,023,700'Method and apparatus for single step selective nitridation'20158,916,484'Remote plasma radical treatment of silicon oxide'20148,888,916'Thermal reactor with improved gas flow distribution'20148,748,259'Method and apparatus for single step selective nitridation'20148,741,785'Remote plasma radical treatment of silicon oxide'20148,608,853'Thermal reactor with improved gas flow distribution'20138,546,271'Method of improving oxide growth rate of selective oxidation processes'20138,497,193'Method of thermally treating silicon with oxygen'20138,492,292'Methods of forming oxide layers on substrates'20138,435,906'Methods for forming conformal oxide layers on semiconductor devices'20138,409,353'Water cooled gas injector'20138,207,044'Methods for oxidation of a semiconductor device'20128,056,500'Thermal reactor with improved gas flow distribution'20118,043,981'Dual frequency low temperature oxidation of a semiconductor device'20117,972,441'Thermal oxidation of silicon using ozone'20117,951,728'Method of improving oxide growth rate of selective oxidation processes'20117,947,561'Methods for oxidation of a semiconductor device'20117,547,633'UV assisted thermal processing'20096,713,127'Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2016Patents assigned to APPLIED MATERIALS INC (22)· patent assignee history
2004–2016Based in San Jose, CA, US· patent location history
2011–2016Patents assigned to YOKOTA YOSHITAKA (10)· patent assignee history
2011–2013Patents assigned to BEHDJAT MEHRAN (4)· patent assignee history
2011–2013Patents assigned to RAMAMURTHY SUNDAR (4)· patent assignee history
2011–2013Patents assigned to TAM NORMAN (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 22 | 2004–2016 |
| YOKOTA YOSHITAKAself | 10 | 2011–2016 |
| BEHDJAT MEHRAN | 4 | 2011–2013 |
| RAMAMURTHY SUNDAR | 4 | 2011–2013 |
| TAM NORMAN | 4 | 2011–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 22 | 2004–2016 |