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Inventor

Tsutomu Hori

Inventor
Itami, JP

Overview

26→
Patents
2014–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth36%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10DInorganic electric semiconductor devices15%
Y10TTechnical subjects covered by former us classification7%
C23CCoating metallic material4%
B24BMachines, devices, or processes for grinding or polishing1%
B28DWorking stone or stone-like materials1%
PatentTitleYear
10,865,501Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device202010,825,903Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device202010,811,500Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device202010,724,151Device of manufacturing silicon carbide single crystal202010,714,572Silicon carbide epitaxial substrate and method for manufacturing a silicon carbide semiconductor device202010,700,169Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device202010,513,799Method for manufacturing silicon carbide single crystal201910,494,735Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate201910,427,324Silicon carbide ingot and method for manufacturing silicon carbide substrate201910,361,273Silicon carbide substrate201910,337,119Method of manufacturing silicon carbide epitaxial substrate201910,283,596Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device201910,246,797Method for manufacturing silicon carbide single crystal201910,202,709Method for manufacturing silicon carbide single crystal201910,184,191Method for manufacturing silicon carbide single crystal201910,121,865Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device20189,856,583'Method of manufacturing silicon carbide single crystal'20189,845,549Method of manufacturing silicon carbide single crystal20179,799,735'Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate'20179,777,400'Method for producing single crystal'20179,777,401'Method for producing single crystal'20179,631,296'Method of manufacturing silicon carbide substrate'20179,546,437'Ingot, silicon carbide substrate, and method for producing ingot'20179,290,860'Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate'20168,642,154'Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot'20148,642,153'Single crystal silicon carbide substrate and method of manufacturing the same'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (24)· patent assignee history
2014Patents assigned to FUJIWARA SHINSUKE (2)· patent assignee history
2014Patents assigned to HORI TSUTOMU (2)· patent assignee history
2014Patents assigned to NISHIGUCHI TARO (2)· patent assignee history
2014Patents assigned to SASAKI MAKOTO (2)· patent assignee history
2014–2020Based in Itami, JP· patent location history
2019–2020Based in Hyogo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES242014–2020
FUJIWARA SHINSUKE22014
HORI TSUTOMUself22014
NISHIGUCHI TARO22014
SASAKI MAKOTO22014
Locations
LocationPatentsSpan
Itami, JP242014–2020
Hyogo, JP22019–2020