Inventor
John M. Macaulay
Inventor
Palo Alto, CA, US
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps58%
B82YSpecific uses or applications of nanostructures22%
Y10TTechnical subjects covered by former us classification8%
C08JWorking-up2%
C23CCoating metallic material2%
C23FNon-mechanical removal of metallic material from surface2%
C25DProcesses for the electrolytic or electrophoretic production of coatings2%
C25FProcesses for the electrolytic removal of materials from objects2%
H10HInorganic light-emitting semiconductor devices having potential barriers2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
7,090,554'Fabrication of flat-panel display having spacer with rough face for inhibiting secondary electron escape'20067,025,892'Method for creating gated filament structures for field emission displays'20066,617,772'Flat-panel display having spacer with rough face for inhibiting secondary electron escape'20036,515,407'Gated filament structures for a field emission display'20036,379,210'Fabrication of electron emitters coated with material such as carbon'20026,356,014'Electron emitters coated with carbon containing layer'20026,204,596'Filamentary electron-emission device having self-aligned gate or/and lower conductive/resistive region'20016,187,603'Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material'20016,019,658'Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings, typically in combination with spacer material to control spacing between gate layer and electron-emissive elements'20005,914,150'Formation of polycarbonate film with apertures determined by etching charged-particle tracks'19995,913,704'Fabrication of electronic devices by method that involves ion tracking'19995,900,301'Structure and fabrication of electron-emitting devices utilizing electron-emissive particles which typically contain carbon'19995,897,414'Technique for increasing manufacturing yield of matrix-addressable device'19995,893,967'Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device'19995,865,659'Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements'19995,851,669'Field-emission device that utilizes filamentary electron-emissive elements and typically has self-aligned gate'19985,827,099'Use of early formed lift-off layer in fabricating gated electron-emitting devices'19985,813,892'Use of charged-particle tracks in fabricating electron-emitting device having resistive layer'19985,801,477'Gated filament structures for a field emission display'19985,766,446'Electrochemical removal of material, particularly excess emitter material in electron-emitting device'19985,755,944'Formation of layer having openings produced by utilizing particles deposited under influence of electric field'19985,728,435'Method for enhancing electron emission from carbon-containing cathode'19985,666,025'Flat-panel display containing structure for enhancing electron emission from carbon-containing cathode'19975,665,421'Method for creating gated filament structures for field emission displays'19975,608,283'Electron-emitting devices utilizing electron-emissive particles which typically contain carbon'19975,607,335'Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material'19975,578,185'Method for creating gated filament structures for field emision displays'19965,564,959'Use of charged-particle tracks in fabricating gated electron-emitting devices'19965,562,516'Field-emitter fabrication using charged-particle tracks'19965,559,389'Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals'19965,552,659'Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence'19965,462,467'Fabrication of filamentary field-emission device, including self-aligned gate'19955,463,271'Structure for enhancing electron emission from carbon-containing cathode'19955,139,624'Method for making porous semiconductor membranes'19925,089,292'Field emission cathode array coated with electron work function reducing material, and method'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992Based in Summit, NJ, US· patent location history
1992Based in Menlo Park, CA, US· patent location history
1995–1997Patents assigned to SILICON VIDEO CORP (8)· patent assignee history
1995–1999Patents assigned to MASSACHUSETTS INST TECHNOLOGY (4)· patent assignee history
1995–2006Based in Palo Alto, CA, US· patent location history
1997–2006Patents assigned to CANDESCENT TECH CORP (23)· patent assignee history
1999–2006Patents assigned to ADVANCED TECH MATERIALS (5)· patent assignee history
1999–2006Based in Mountain View, CA, US· patent location history
2002–2003Patents assigned to CANDESCENT INTELLECTUAL PROP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANDESCENT TECH CORP | 23 | 1997–2006 |
| SILICON VIDEO CORP | 8 | 1995–1997 |
| ADVANCED TECH MATERIALS | 5 | 1999–2006 |
| MASSACHUSETTS INST TECHNOLOGY | 4 | 1995–1999 |
| CANDESCENT INTELLECTUAL PROP | 2 | 2002–2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 27 | 1995–2006 |
| Mountain View, California, US | 6 | 1999–2006 |
| Summit, New Jersey, US | 1 | 1992 |
| Menlo Park, California, US | 1 | 1992 |