Inventor
Osamu Minato
Inventor
Tokyo, JP
Overview
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices25%
G11CStatic stores23%
H10DInorganic electric semiconductor devices16%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H03KPulse technique3%
G06FElectric digital data processing2%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy1%
H03FAmplifiers1%
PatentTitleYear
5,700,705'Semiconductor integrated circuit device'19975,646,423'Semiconductor integrated circuit device'19975,619,055'Semiconductor integrated circuit device'19975,483,083'Semiconductor integrated circuit device'19965,237,528'Semiconductor memory'19935,214,496'Semiconductor memory'19935,194,749'Semiconductor integrated circuit device'19935,172,335'Semiconductor memory with divided bit load and data bus lines'19925,148,387'Logic circuit and data processing apparatus using the same'19925,132,771'Semiconductor memory device having flip-flop circuits'19925,079,611'Semiconductor integrated circuit device and process for fabricating the same'19925,028,975'Semiconductor devices and a process for producing the same'19914,992,677'High speed MOSFET output buffer with low noise'19914,937,790'Semiconductor memory device'19904,935,901'Semiconductor memory with divided bit load and data bus lines'19904,901,128'Semiconductor memory'19904,876,669'MOS static type RAM having a variable load'19894,853,894'Static random-access memory having multilevel conductive layer'19894,849,801'Semiconductor memory device having increased capacitance for the storing nodes of the memory cells'19894,841,486'Semiconductor memory device and sense amplifier'19894,805,147'Stacked static random access memory cell having capacitor'19894,797,717'Semiconductor memory device'19894,792,841'Semiconductor devices and a process for producing the same'19884,785,342'Static random access memory having structure of first-, second- and third-level conductive films'19884,760,561'MOS static type RAM having a variable load'19884,747,082'Semiconductor memory with automatic refresh means'19884,701,884'Semiconductor memory for serial data access'19874,672,586'Semiconductor memory having circuit effecting refresh on variable cycles'19874,653,025'Random access memory with high density and low power'19874,641,285'Line change-over circuit and semiconductor memory using the same'19874,616,243'Gate protection for a MOSFET'19864,609,407'Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers'19864,609,835'Semiconductor integrated circuit'19864,539,660'Semiconductor integrated circuit'19854,507,759'Static memory'19854,492,974'DMOS With gate protection diode formed over base region'19854,455,495'Programmable semiconductor integrated circuitry including a programming semiconductor element'19844,377,819'Semiconductor device'19834,280,065'Tri-state type driver circuit'19814,261,004'Semiconductor device'19814,086,642'Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device'1978Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1978–1997Patents assigned to HITACHI LTD (40)· patent assignee history
1978–1986Based in Kokubunji, JP· patent location history
1984–1991Based in Kodaira, JP· patent location history
1985–1990Patents assigned to HITACHI MAXELL (2)· patent assignee history
1985–1988Patents assigned to HITACHI MICROCUMPUTER ENG (2)· patent assignee history
1986–1992Based in Nishitama-gun, JP· patent location history
1987–1993Based in Tokyo, JP· patent location history
1988–1992Patents assigned to HITACHI VLSI ENG (2)· patent assignee history
1988–1997Based in Hinode, JP· patent location history
1989Patents assigned to HITACHI MICROCOMPUTER HITACHI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 40 | 1978–1997 |
| HITACHI MAXELL | 2 | 1985–1990 |
| HITACHI MICROCUMPUTER ENG | 2 | 1985–1988 |
| HITACHI VLSI ENG | 2 | 1988–1992 |
| HITACHI MICROCOMPUTER HITACHI | 1 | 1989 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 14 | 1987–1993 |
| Hinode, JP | 9 | 1988–1997 |
| Kodaira, JP | 7 | 1984–1991 |
| Nishitama-gun, JP | 6 | 1986–1992 |
| Kokubunji, JP | 5 | 1978–1986 |