Inventor

Yukihiko Watanabe

Inventor

Nagoya, JP

Overview

1994–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices41%

H01LSemiconductor devices28%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

C21DModifying the physical structure of ferrous metals1%

C22FChanging the physical structure of non-ferrous metals and non-ferrous alloys1%

C30BSingle-crystal growth1%

H10BElectronic memory devices1%

PatentTitleYear

10,784,335Silicon carbide semiconductor device and manufacturing method therefor2020 10,770,579SiC-MOSFET and method of manufacturing the same2020 10,734,515Silicon carbide semiconductor device and manufacturing method therefor2020 10,720,493Silicon carbide semiconductor device and manufacturing method therefor2020 10,516,046Silicon carbide semiconductor device2019 10,446,649Silicon carbide semiconductor device2019 10,170,470Switching device2019 10,153,350Semiconductor device2018 10,153,345Insulated gate switching device and method for manufacturing the same2018 10,020,390Semiconductor device and semiconductor device manufacturing method2018 9,911,803'Semiconductor device'2018 9,905,686'Insulated gate bipolar transistor with improved on/off resistance'2018 9,865,723'Switching device'2018 9,853,141Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes2017 9,825,123'Schottky barrier diode and method for manufacturing the same'2017 9,818,860'Silicon carbide semiconductor device and method for producing the same'2017 9,793,376'Silicon carbide semiconductor device and method of manufacturing the same'2017 9,780,205'Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof'2017 9,673,288'Silicon carbide semiconductor device including conductivity layer in trench'2017 9,660,046'Method of manufacturing semiconductor device'2017 9,647,108'Silicon carbide semiconductor device'2017 9,640,651'Semiconductor device and method of manufacturing semiconductor device'2017 9,543,428'Silicon carbide semiconductor device and method for producing the same'2017 9,515,160'Silicon carbide semiconductor device and method for producing the same'2016 9,391,190'Field effect transistor incorporating a Schottky diode'2016 9,337,298'Silicon carbide semiconductor device and method for producing the same'2016 9,276,075'Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same'2016 9,219,142'Semiconductor device having element region and termination region surrounding element region'2015 9,214,526'Semiconductor device'2015 9,136,372'Silicon carbide semiconductor device'2015 9,024,330'Semiconductor device and manufacturing method thereof'2015 8,975,139'Manufacturing method of silicon carbide semiconductor device'2015 8,748,975'Switching element and manufacturing method thereof'2014 8,710,586'SIC semiconductor device and method for manufacturing the same'2014 8,618,555'Silicon carbide semiconductor device and method of manufacturing the same'2013 8,575,689'Silicon carbide semiconductor device and manufacturing method of the same'2013 8,525,223'Silicon carbide semiconductor device'2013 8,518,809'Manufacturing method of silicon carbide single crystal'2013 8,492,867'Semiconductor device including cell region and peripheral region having high breakdown voltage structure'2013 8,470,672'Method of manufacturing silicon carbide semiconductor device'2013 8,440,524'Semiconductor device manufacturing method'2013 8,436,365'SiC semiconductor device having Schottky barrier diode and method for manufacturing the same'2013 8,334,541'SiC semiconductor device'2012 8,324,704'Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same'2012 8,168,485'Semiconductor device making method'2012 8,163,637'Forming impurity regions in silicon carbide devices'2012 7,796,442'Nonvolatile semiconductor memory device and method of erasing and programming the same'2010 5,304,822'Static induction type semiconductor device with multiple source contact regions'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994Based in Kasugai, JP· patent location history

2010–2020Patents assigned to DENSO CORP (43)· patent assignee history

2010–2019Based in Nagoya, JP· patent location history

2012–2020Patents assigned to TOYOTA MOTOR CO LTD (44)· patent assignee history

2012–2018Patents assigned to WATANABE YUKIHIKO (22)· patent assignee history

2012–2017Patents assigned to TAKAYA HIDEFUMI (13)· patent assignee history

2012–2017Patents assigned to SUGIMOTO MASAHIRO (12)· patent assignee history

2012–2015Based in Aichi, JP· patent location history

2016–2020Based in Nagakute-shi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOYOTA MOTOR CO LTD	44	2012–2020
DENSO CORP	43	2010–2020
WATANABE YUKIHIKOself	22	2012–2018
TAKAYA HIDEFUMI	13	2012–2017
SUGIMOTO MASAHIRO	12	2012–2017

Locations

Location	Patents	Span
Nagoya, JP	32	2010–2019
Nagakute-shi, JP	13	2016–2020
Aichi, JP	2	2012–2015
Kasugai, JP	1	1994