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Inventor

Muneyasu Nakashima

Inventor
Tokyo, JP

Overview

1→
Patents
1979
Patent span
Electricity
Primary field (CPC H)

Patents· 1 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth25%
H10NElectric solid-state devices not otherwise provided for25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests25%
PatentTitleYear
4,177,298'Method for producing an InSb thin film element'1979

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1979Patents assigned to HITACHI LTD (1)· patent assignee history
1979Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD11979
Locations
LocationPatentsSpan
Tokyo, JP11979