Inventor
MASAYUKI IMANISHI
Inventor
JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth18%
C23CCoating metallic material9%
G06TImage data processing or generation, in general6%
H01LSemiconductor devices6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G06KGraphical data reading5%
G06VImage or video recognition or understanding5%
G09GArrangements or circuits for control of indicating devices using static means to present variable information5%
H04NPictorial communication, e.g. television5%
B60KArrangement or mounting of propulsion units or of transmissions in vehicles3%
PatentTitleYear
12,500,773Imaging apparatus, information processing apparatus, information processing method, and program202512,198,166Image processing that permits imaging operations with reference to user information202512,094,710Method of forming nitride semiconductor film202412,049,710Group-III nitride substrate202411,879,184Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate202411,859,311Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)202411,795,573Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate202311,753,739Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5202311,713,517Group-III nitride substrate202311,713,516Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal202311,624,128Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal202311,396,716Group-III nitride substrate containing carbon at a surface region thereof202211,377,757Method for producing group III nitride crystal and seed substrate202211,301,695Orientation detection device and non-transitory computer readable medium202211,270,133Object detection device, object detection method, and computer-readable recording medium202211,264,000Display control device and non-transitory computer readable medium202211,220,759Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step202211,189,250Display control device and display control method202111,155,931Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 52021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to PANASONIC CORP (8)· patent assignee history
2021–2024Patents assigned to UNIV OSAKA (7)· patent assignee history
2021–2022Patents assigned to DENSO CORP (4)· patent assignee history
2021–2025Based in JP· patent location history
2022–2024Patents assigned to PANASONIC HOLDINGS CORP (10)· patent assignee history
2025Patents assigned to SONY GROUP CORP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PANASONIC HOLDINGS CORP | 10 | 2022–2024 |
| PANASONIC CORP | 8 | 2021–2023 |
| UNIV OSAKA | 7 | 2021–2024 |
| DENSO CORP | 4 | 2021–2022 |
| SONY GROUP CORP | 2 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 19 | 2021–2025 |