Inventor
Reinhard Losehand
Inventor
Munich, DE
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices45%
H03KPulse technique8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
G01RMeasuring electric variables3%
G11CStatic stores3%
H01FMagnets3%
H01JElectric discharge tubes or discharge lamps3%
H01LSemiconductor devices3%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner3%
PatentTitleYear
9,129,836'High-frequency switching transistor and high-frequency circuit'20158,525,272'High-frequency switching transistor and high-frequency circuit'20137,737,470'High-frequency diode'20107,564,103'High-frequency switching transistor and high-frequency circuit'20097,508,192'Circuit with a capacitive element with method for testing the same'20097,504,708'High-frequency switching device'20097,453,509'Digital camera with a transparent core disposed between a lens and a light-sensitive sensor'20087,247,926'High-frequency switching transistor'20077,176,546'Diode circuit and method of producing a diode circuit'20077,030,457'Capacitor and method for producing a capacitor'20066,949,812'Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure'20056,888,430'Integrated radiofrequency circuit component having a trimming diode controlled by a trimming voltage provided by a D/A converter'20056,873,242'Magnetic component'20056,842,083'Component having an integrated radiofrequency circuit'20056,551,911'Method for producing Schottky diodes and Schottky diodes'20036,448,162'Method for producing schottky diodes'20026,191,015'Method for producing a Schottky diode assembly formed on a semiconductor substrate'20016,060,757'High frequency RF diode with low parasitic capacitance'20005,907,179'Schottky diode assembly and production method'19994,859,616'Method of making schottky contacts on semiconductor surfaces'19894,089,023'Two-phase charge-coupled semiconductor arrangement'19784,032,947'Controllable charge-coupled semiconductor device'19774,012,660'Signal plate for an electric storage tube of high writing speed'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977–2001Patents assigned to SIEMENS AG (7)· patent assignee history
1977–2015Based in Munich, DE· patent location history
2002–2015Patents assigned to INFINEON TECHNOLOGIES AG (16)· patent assignee history
2002–2003Based in Mnchen, DE· patent location history
2005–2010Based in München, DE· patent location history
2013Patents assigned to GERLACH UDO (1)· patent assignee history
2013Patents assigned to LOSEHAND REINHARD (1)· patent assignee history
2013Patents assigned to TADDIKEN HANS (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 16 | 2002–2015 |
| SIEMENS AG | 7 | 1977–2001 |
| GERLACH UDO | 1 | 2013 |
| LOSEHAND REINHARDself | 1 | 2013 |
| TADDIKEN HANS | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Munich, DE | 15 | 1977–2015 |
| München, DE | 6 | 2005–2010 |
| Mnchen, DE | 2 | 2002–2003 |