Inventor
Yoshihiro Hamakawa
Inventor
Kawanishi, JP
Overview
41→
Patents
1981–2004
Patent span
General tagging of new technological developments
Primary field (CPC Y)
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation20%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution19%
Y02PClimate change mitigation technologies in the production or processing of goods14%
G11BInformation storage based on relative movement between record carrier and transducer13%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
Y10TTechnical subjects covered by former us classification5%
C23CCoating metallic material4%
C30BSingle-crystal growth4%
B82YSpecific uses or applications of nanostructures3%
H01FMagnets3%
PatentTitleYear
6,706,959'Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles'20046,515,837'Magnetoresistive head and magnetic storage apparatus'20036,327,123'Magnetic head employing magnetoresistive sensor and magnetic storage and retrieval system'20016,087,027'Magnetic layered material, and magnetic sensor and magnetic storage/read system based thereon'20005,976,906'Method for manufacturing a solid state image sensing device'19995,942,788'Solid state image sensing device'19995,843,589'Magnetic layered material, and magnetic sensor and magnetic storage/read system based thereon'19985,719,729'Magnetic head and recording and reproducing apparatus having an arrangement for improving coincidence between a magnetic center of a read head and physical center of a write head'19985,686,734'Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device'19975,461,526'Magnetoresistive read head and magnetic storage system using the same'19955,419,781'Flexible photovoltaic device'19955,235,591'Stack type optical disc apparatus, sealed and separate type optical head therefor and optical disc medium'19935,127,964'Flexible photovoltaic device'19925,126,907'Thin film magnetic head having at least one magnetic core member made at least partly of a material having a high saturation magnetic flux density'19925,021,103'Method of forming microcrystalline silicon-containing silicon carbide film'19914,943,879'Thin film magnetic head including magnetic layers having high saturation magnetic flux density and metal film for avoiding deterioration during manufacturing'19904,881,144'Thin film magnetic head'19894,875,943'Flexible photovoltaic device'19894,820,915'Color sensor with amorphous pin structure'19894,814,921'Multilayered magnetic films and thin-film magnetic heads using the same as a pole'19894,773,942'Flexible photovoltaic device'19884,766,039'Magnetic head made from amorphous magnetic film'19884,762,755'Ferromagnetic material and a magnetic head using the same material'19884,760,481'Thin film magnetic head having an improved coil'19884,758,399'Substrate for manufacturing single crystal thin films'19884,735,396'Substrate for manufacturing single crystal thin films'19884,717,630'Substrate for manufacturing single crystal thin films'19884,670,762'Amorphous silicon semiconductor and process for same'19874,634,601'Method for production of semiconductor by glow discharge decomposition of silane'19874,612,409'Flexible photovoltaic device'19864,544,423'Amorphous silicon semiconductor and process for same'19854,499,331'Amorphous semiconductor and amorphous silicon photovoltaic device'19854,496,788'Photovoltaic device'19854,491,682'Amorphous silicon photovoltaic device including a two-layer transparent electrode'19854,453,184'Solid state imaging device'19844,450,316'Amorphous silicon photovoltaic device having two-layer transparent electrode'19844,410,559'Method of forming amorphous silicon films'19834,388,482'High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon'19834,385,199'Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon'19834,385,200'Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon'19834,271,328'Photovoltaic device'1981Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1981–1991Patents assigned to HAMAKAWA YOSHIHIRO (9)· patent assignee history
1981–1991Based in Hyogo, JP· patent location history
1983Patents assigned to TAWADA YOSHIHISA (4)· patent assignee history
1983–2004Based in Kawanishi, JP· patent location history
1984–1995Patents assigned to KANEGAFUCHI CHEMICAL IND (11)· patent assignee history
1988–2003Patents assigned to HITACHI LTD (14)· patent assignee history
1988–1989Based in Kokubunji, JP· patent location history
1989–1993Based in Koganei, JP· patent location history
1995–2001Based in Urawa, JP· patent location history
1999Patents assigned to MINOLTA CO LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 14 | 1988–2003 |
| KANEGAFUCHI CHEMICAL IND | 11 | 1984–1995 |
| HAMAKAWA YOSHIHIROself | 9 | 1981–1991 |
| TAWADA YOSHIHISA | 4 | 1983 |
| MINOLTA CO LTD | 2 | 1999 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawanishi, JP | 19 | 1983–2004 |
| Urawa, JP | 5 | 1995–2001 |
| Hyogo, JP | 5 | 1981–1991 |
| Koganei, JP | 4 | 1989–1993 |
| Kokubunji, JP | 4 | 1988–1989 |