Inventor

Katsunori Ueno

Inventor

Matsumoto, JP

Overview

1987–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 94 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices43%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%

H01LSemiconductor devices14%

G01TMeasurement of nuclear or x-radiation3%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%

C23CCoating metallic material2%

H03KPulse technique2%

A61NElectrotherapy2%

H01FMagnets2%

PatentTitleYear

10,967,201Radiation monitor and method of monitoring radiation2021 10,908,301Radiation monitor2021 10,903,352Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device2021 10,877,167Radiation monitor and method of analyzing radiation monitor2020 10,751,553Radiation therapy apparatus2020 10,749,003Manufacturing method of semiconductor device and semiconductor device2020 10,722,734X-ray energy distribution measurement apparatus and X-ray therapy apparatus2020 10,644,147Vertical semiconductor device and method of manufacturing vertical semiconductor device2020 10,615,293Diode and method of manufacturing diode2020 10,374,031Semiconductor device and manufacturing method of semiconductor device2019 10,366,891Semiconductor device and method of manufacturing semiconductor device2019 10,256,292Vertical MOSFET2019 10,224,122Reactor instrumentation system and reactor2019 10,181,514Vertical semiconductor device and manufacturing method thereof2019 10,176,981Semiconductor device and semiconductor device manufacturing method2019 10,170,564Manufacturing method of semiconductor device and semiconductor device2019 10,141,192Manufacturing method of semiconductor device2018 10,128,106Semiconductor device and manufacturing method of the semiconductor device2018 10,121,876Method for high temperature annealing of a nitride semiconductor layer2018 10,069,003MOSFET2018 9,972,715Semiconductor device and semiconductor device manufacturing method2018 9,905,433'Manufacturing method of semiconductor device including a nitride semiconductor layer'2018 9,875,899Semiconductor transistor2018 9,805,930'Method of manufacturing nitride semiconductor device using laminated cap layers'2017 9,806,068'Semiconductor device'2017 9,754,783'Method for producing a semiconductor device, and semiconductor device'2017 9,519,067'Radioactive gas measurement apparatus and failed fuel inspection apparatus'2016 9,478,645'Bidirectional device, bidirectional device circuit and power conversion apparatus'2016 9,450,084'Wide band gap semiconductor device'2016 9,431,391'Gallium nitride hemt device with a mosfet in series coupled to diodes for protection of high-voltage'2016 9,274,233'Dosage rate measurement system and dosage rate measurement method'2016 8,928,003'Nitride semiconductor device'2015 8,842,797'Gamma scanning apparatus'2014 8,836,042'Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel'2014 8,829,568'Gallium nitride semiconductor device and method for producing the same'2014 8,283,697'Internal combustion engine igniter semiconductor device'2012 8,269,594'Insulated transformers, and power converting device'2012 8,039,346'Insulated gate silicon carbide semiconductor device and method for manufacturing the same'2011 8,039,879'Semiconductor device having a control circuit and method of its manufacture'2011 7,994,890'Insulating transformer and power conversion device'2011 7,982,524'Level shift circuit and semiconductor device thereof'2011 7,947,600'Manufacturing method for micro-transformers'2011 7,791,135'Insulated gate silicon carbide semiconductor device and method for manufacturing the same'2010 7,700,971'Insulated gate silicon carbide semiconductor device'2010 7,376,490'Operational control device, operational control method, program and storage medium thereof, for a plurality of power consumption systems'2008 7,355,257'Semiconductor superjunction device'2008 7,098,488'Insulated gate bipolar transistor'2006 7,042,046'Super-junction semiconductor device and method of manufacturing the same'2006 7,029,977'Fabrication method of semiconductor wafer'2006 7,002,205'Super-junction semiconductor device and method of manufacturing the same'2006 6,903,418'Semiconductor device'2005 6,787,420'Semiconductor device with alternating conductivity type layer and method of manufacturing the same'2004 6,724,042'Super-junction semiconductor device'2004 6,700,141'Semiconductor device'2004 6,696,728'Super-junction semiconductor device'2004 6,693,323'Super-junction semiconductor device'2004 6,677,643'Super-junction semiconductor device'2004 6,674,126'Semiconductor device'2004 6,639,273'Silicon carbide n channel MOS semiconductor device and method for manufacturing the same'2003 6,621,132'Semiconductor device'2003 6,512,268'Super-junction semiconductor device'2003 6,475,864'Method of manufacturing a super-junction semiconductor device with an conductivity type layer'2002 6,465,807'Silicon carbide vertical MOSFET and method for manufacturing the same'2002 6,303,947'Silicon carbide vertical FET and method for manufacturing the same'2001 6,294,444'Method for manufacturing silicon carbide semiconductor device'2001 6,291,856'Semiconductor device with alternating conductivity type layer and method of manufacturing the same'2001 6,265,326'Method for forming thermal oxide film of silicon carbide semiconductor device'2001 6,238,980'Method for manufacturing silicon carbide MOS semiconductor device including utilizing difference in mask edges in implanting'2001 6,136,727'Method for forming thermal oxide film of silicon carbide semiconductor device'2000 6,117,735'Silicon carbide vertical FET and method for manufacturing the same'2000 6,096,607'Method for manufacturing silicon carbide semiconductor device'2000 6,054,352'Method of manufacturing a silicon carbide vertical MOSFET'2000 5,963,807'Silicon carbide field effect transistor with increased avalanche withstand capability'1999 5,895,939'Silicon carbide field effect transistor with increased avalanche withstand capability'1999 5,844,760'Insulated-gate controlled semiconductor device'1998 5,789,311'Manufacturing method of SiC Schottky diode'1998 5,714,774'Two-gate semiconductor power switching device'1998 5,693,569'Method of forming silicon carbide trench mosfet with a schottky electrode'1997 5,614,749'Silicon carbide trench MOSFET'1997 5,606,183'Double-gated turn-off thyristor'1997 5,477,077'Semiconductor device and a method for the manufacture thereof'1995 5,444,273'MOSFET controlled thyristor'1995 5,397,905'Power semiconductor device having an insulated gate field effect transistor and a bipolar transistor'1995 5,384,270'Method of producing silicon carbide MOSFET'1995 5,378,903'Semiconductor device with low on-voltage and large controllable turn-off current'1995 5,346,838'Method for fabricating an insulated gate control thyristor'1994 5,331,194'Bipolar static induction transistor'1994 5,319,221'Semiconductor device with MISFET-controlled thyristor'1994 5,281,833'Insulated gate control thyristor'1994 5,194,927'Semiconductor device'1993 5,021,846'MOS semiconductor device with an inverted U-shaped gate'1991 4,985,802'High voltage through type capacitor and manufacturing method therefor'1991 4,851,888'Conductivity modulation type vertical MOS-FET'1989 4,645,955'Signal conversion circuit for photosensor array'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2021Patents assigned to FUJI ELECTRIC CO LTD (69)· patent assignee history

1989–2016Based in Kanagawa, JP· patent location history

1994–2021Based in Matsumoto, JP· patent location history

1994–1998Based in Kawasaki, JP· patent location history

1997–2016Based in Nagano, JP· patent location history

2005–2010Patents assigned to FUJI ELEC DEVICE TECH CO LTD (4)· patent assignee history

2008–2021Based in Tokyo, JP· patent location history

2010–2016Patents assigned to FUJI ELECTRIC SYSTEMS CO LTD (4)· patent assignee history

2012–2018Patents assigned to UENO KATSUNORI (9)· patent assignee history

2016–2021Patents assigned to HITACHI LTD (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FUJI ELECTRIC CO LTD	69	1989–2021
UENO KATSUNORIself	9	2012–2018
HITACHI LTD	8	2016–2021
FUJI ELEC DEVICE TECH CO LTD	4	2005–2010
FUJI ELECTRIC SYSTEMS CO LTD	4	2010–2016

Locations

Location	Patents	Span
Matsumoto, JP	34	1994–2021
Nagano, JP	22	1997–2016
Kanagawa, JP	17	1989–2016
Tokyo, JP	8	2008–2021
Kawasaki, JP	7	1994–1998