Inventor
Seung Ho Pyi
Inventor
Seongnam-si, KR
Overview
Patents· 90 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices26%
H10DInorganic electric semiconductor devices25%
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
G11CStatic stores2%
C30BSingle-crystal growth1%
H10NElectric solid-state devices not otherwise provided for0%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests0%
PatentTitleYear
10,985,177Method of manufacturing a semiconductor device having non-overlapping slits at one side of the channel layers of a memory block202110,978,472Semiconductor device and method of manufacturing the same202110,923,497Electronic device having stacked structures and method for manufacturing the same202110,847,533Three-dimensional structured memory devices202010,734,404Semiconductor device and method of manufacturing the same202010,559,587Electronic device and method for manufacturing the same202010,367,0013D semiconductor memory device201910,347,6533D semiconductor memory device201910,290,651Semiconductor devices with non-overlapping slits in-between memory blocks201910,283,518Semiconductor device and method of manufacturing the same201910,269,827Electronic device having stacked structures201910,096,617Three-dimensional structured memory devices201810,096,6143D semiconductor memory device201810,096,615Semiconductor device and method of manufacturing the same20189,991,279Method for manufacturing electronic device using sacrificial layer20189,966,384Methods of manufacturing a semiconductor device with non-overlapping slits in-between memory blocks20189,941,291Three-dimensional non-volatile memory device20189,837,436Semiconductor device and method of manufacturing the same20179,780,036'Semiconductor device'20179,761,527'Semiconductor device'20179,755,085'Semiconductor device and method of manufacturing the same'20179,691,785'Three-dimensional structured memory devices'20179,640,542'Semiconductor device having contact pads'20179,640,550'Semiconductor device having three-dimensional structure and method of manufacturing the same'20179,634,152'Semiconductor device and method of manufacturing the same'20179,634,022'Three dimensional semiconductor device'20179,620,513'Semiconductor device and method of manufacturing the same'20179,576,970'Three-dimensional semiconductor memory device'20179,570,462'Electronic device and method for manufacturing the same'20179,559,114'Manufacturing method of three-dimensional non-volatile memory device including a selection gate having an L shape'20179,524,978'3D non-volatile memory device and method of manufacturing the same'20169,508,730'Semiconductor device and manufacturing method thereof'20169,472,569'Method of manufacturing a double-source semiconductor device'20169,472,567'Semiconductor device having three-dimensional structure and method of manufacturing the same'20169,431,344'Semiconductor device'20169,425,210'Double-source semiconductor device'20169,418,892'Transistor, semiconductor device and method of manufacturing the same'20169,385,135'Nonvolatile memory device and method for fabricating the same'20169,356,038'Semiconductor device and method of fabricating the same'20169,337,198'Semiconductor device and method of manufacturing the same'20169,331,082'Three-dimensional semiconductor device'20169,324,824'Transistor, semiconductor device and method of manufacturing the same'20169,299,717'Semiconductor device'20169,287,289'Semiconductor device and method of manufacturing the same'20169,269,719'Semiconductor device and method of manufacturing the same'20169,257,447'Semiconductor device and method of manufacturing the same'20169,224,752'Double-source semiconductor device'20159,202,780'Three dimensional semiconductor device including pads'20159,202,870'Semiconductor device and method of manufacturing the same'20159,190,514'Three-dimensional non-volatile memory device'20159,190,416'Three-dimensional structured memory devices'20159,159,570'Non-volatile memory device and method for fabricating the same'20159,123,580'Semiconductor device and method of manufacturing the same'20159,099,348'Semiconductor device and method of manufacturing the same'20159,099,566'Semiconductor device and method of manufacturing the same'20159,087,735'Semiconductor device and method of manufacturing the same'20159,006,884'Three dimensional semiconductor device including pads'20158,999,787'Semiconductor device'20158,987,908'Semiconductor memory device including a slit'20158,946,808'Semiconductor device and method of manufacturing the same'20158,928,059'Nonvolatile memory device and method for fabricating the same'20158,928,063'Non-volatile memory device and method for fabricating the same'20158,890,251'Semiconductor device and method of manufacturing the same'20148,878,277'3D non-volatile memory device and method of manufacturing the same'20148,872,254'Semiconductor device and method of manufacturing the same'20148,860,119'Nonvolatile memory device and method for fabricating the same'20148,853,767'Three dimensional semiconductor memory device and method of manufacturing the same'20148,847,304'Semiconductor device'20148,754,485'3-dimensional non-volatile memory device including a selection gate having an L shape'20148,748,970'Semiconductor device and method of manufacturing the same'20148,735,962'Semiconductor device and method of manufacturing the same'20148,709,894'3D structured memory devices and methods for manufacturing thereof'20148,698,231'Semiconductor device and method of manufacturing the same'20148,294,200'Non-volatile memory device'20128,288,819'Semiconductor device with bulb-type recessed channel and method for fabricating the same'20128,022,501'Semiconductor device and method for isolating the same'20117,981,786'Method of fabricating non-volatile memory device having charge trapping layer'20117,968,912'Semiconductor device and method for fabricating the same'20117,948,025'Non-volatile memory device having charge trapping layer and method for fabricating the same'20117,919,371'Method for fabricating non-volatile memory device with charge trapping layer'20117,838,364'Semiconductor device with bulb-type recessed channel and method for fabricating the same'20107,732,352'Silicon wafers and method of fabricating the same'20107,687,357'Semiconductor device and method for fabricating the same'20107,579,255'Semiconductor device and method for isolating the same'20097,242,075'Silicon wafers and method of fabricating the same'20077,214,584'Method for forming semiconductor device capable of preventing bunker defect'20077,189,597'Semiconductor device and method for fabricating the same'20076,969,666'Method for fabricating isolation layer in semiconductor device'20056,841,461'Method for forming gate electrode of semiconductor device'20056,776,841'Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2012Patents assigned to HYNIX SEMICONDUCTOR INC (16)· patent assignee history
2004–2010Based in Kyungki-do, KR· patent location history
2007–2012Based in Ichon-shi, KR· patent location history
2011–2020Based in Yongin-si, KR· patent location history
2012–2017Patents assigned to PYI SEUNG HO (14)· patent assignee history
2014–2021Patents assigned to SK HYNIX INC (66)· patent assignee history
2014–2017Patents assigned to LEE KI HONG (11)· patent assignee history
2014–2020Patents assigned to MICRON TECHNOLOGY INC (5)· patent assignee history
2014–2021Based in Seongnam-si, KR· patent location history
2014–2021Based in Gyeonggi-do, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SK HYNIX INC | 66 | 2014–2021 |
| HYNIX SEMICONDUCTOR INC | 16 | 2004–2012 |
| PYI SEUNG HOself | 14 | 2012–2017 |
| LEE KI HONG | 11 | 2014–2017 |
| MICRON TECHNOLOGY INC | 5 | 2014–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seongnam-si, KR | 33 | 2014–2021 |
| Gyeonggi-do, KR | 33 | 2014–2021 |
| Yongin-si, KR | 9 | 2011–2020 |
| Ichon-shi, KR | 9 | 2007–2012 |
| Kyungki-do, KR | 4 | 2004–2010 |