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Inventor

Carl W. Benyon, Jr.

Inventor
Trenton, NJ, US

Overview

3→
Patents
1978–1987
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
4,634,473'Method for fabricating a radiation hardened oxide having structural damage'19874,313,809'Method of reducing edge current leakage in N channel silicon-on-sapphire devices'19824,097,314'Method of making a sapphire gate transistor'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1978–1987Patents assigned to RCA CORP (3)· patent assignee history
1978–1987Based in Trenton, NJ, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
RCA CORP31978–1987
Locations
LocationPatentsSpan
Trenton, New Jersey, US31978–1987